Datasheet > K6R1016V1B-JP12

K6R1016V1B-JP12

更新时间： 2023-06-15 00:00:00

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器光电二极管
页数	文件大小	规格书
9页	207K
描述
Standard SRAM, 64KX16, 12ns, CMOS, PDSO44, PLASTIC, SOJ-44

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

K6R1016V1B-JP12 数据手册

PRELIMINARY

Preliminary

PRELIMINARY

CMOS SRAM

K6R1016V1B-C/B-L, K6R1016V1B-I/B-P

ABSOLUTE MAXIMUM RATINGS*

Parameter

Voltage on Any Pin Relative to VSS

Voltage on VCC Supply Relative to VSS

Power Dissipation

Symbol

VIN, VOUT

VCC

Rating

-0.5 to 4.6

1.0

Unit

Storage Temperature

TSTG

-65 to 150

0 to 70

°C

Operating Temperature

Commercial

Industrial

-40 to 85

* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and

functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.

Exposure to absolute maximum rating conditions for extended periods may affect reliability.

RECOMMENDED DC OPERATING CONDITIONS*(TA=0 to 70°C)

Parameter

Supply Voltage

Symbol

Min

3.0

Typ

Max

Unit

VCC

3.3

3.6

Ground

VSS

Input High Voltage

Input Low Voltage

VIH

2.0

VCC+0.3***

0.8

VIL

-0.3**

The above parameters are also guaranteed at industrial temperature range.

** VIL(Min) = -2.0V a.c(Pulse Width £ 6ns) for I £ 20mA.

*** VIH(Max) = VCC + 2.0V a.c (Pulse Width £ 6ns) for I £ 20mA.

DC AND OPERATING CHARACTERISTICS*(TA=0 to 70°C, Vcc=3.3±0.3V, unless otherwise specified)

Min

Max

Parameter

Input Leakage Current

Output Leakage Current

Symbol

Test Conditions

Unit

ILI

VIN=VSS to VCC

-2

ILO

CS=VIH or OE=VIH or WE=VIL

VOUT=VSS to VCC

-2

Operating Current

ICC

Min. Cycle, 100% Duty

CS=VIL, VIN=VIH or VIL,

IOUT=0mA

8ns

10ns

12ns

200

195

190

Standby Current

ISB

Min. Cycle, CS=VIH

ISB1

f=0MHz, CS³ VCC-0.2V,

VIN³ VCC-0.2V or VIN£0.2V

Normal

L-Ver.

0.7

0.4

Output Low Voltage Level

Output High Voltage Level

VOL

VOH

IOL=8mA

IOH=-4mA

2.4

* The above parameters are also guaranteed at industrial temperature range.

CAPACITANCE*(TA=25°C, f=1.0MHz)

Item

Symbol

Test Conditions

VI/O=0V

MIN

Max

Unit

Input/Output Capacitance

Input Capacitance

CI/O

CIN

VIN=0V

* Capacitance is sampled and not 100% tested.

Rev 2.1

August 1998

- 3 -

1 234 5 6 7...9

下载PDF

与K6R1016V1B-JP12相关器件

型号	品牌	描述	获取价格	数据表
K6R1016V1B-TL10	SAMSUNG	Standard SRAM, 64KX16, 10ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44	获取价格
K6R1016V1B-TL12	SAMSUNG	Standard SRAM, 64KX16, 12ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44	获取价格
K6R1016V1B-TP10	SAMSUNG	Standard SRAM, 64KX16, 10ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44	获取价格
K6R1016V1B-TP10T	SAMSUNG	Standard SRAM, 64KX16, 10ns, CMOS, PDSO44	获取价格
K6R1016V1B-TP12	SAMSUNG	Standard SRAM, 64KX16, 12ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44	获取价格
K6R1016V1C	SAMSUNG	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industria	获取价格