Datasheet > K6R1016V1C-FL12

K6R1016V1C-FL12

更新时间： 2023-08-15 00:00:00

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器
页数	文件大小	规格书
11页	270K
描述
Standard SRAM, 64KX16, 20ns, CMOS, PBGA48, 0.75 MM PITCH, FBGA-48

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K6R1016V1C-FL12 数据手册

for AT&T

CMOS SRAM

K6R1016V1C-C/C-L, K6R1016V1C-I/C-P

Document Title

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating)

Operated at Commercial and Industrial Temperature Ranges.

Revision History

Rev.No.

Rev. 0.0

Rev. 1.0

History

Remark

Preliminary

Final

Draft Data

Aug. 5. 1998

Sep. 7. 1998

Initial release with Preliminary.

Release to Final Data Sheet.

1.1. Delete Preliminary.

1.2. Changed DC characteristics.

Item

85mA

83mA

Changed

95mA

93mA

ICC

12ns

15ns

20ns

80mA

90mA

Rev. 2.0

Rev. 2.1

Added 48-fine pitch BGA.

Changed device part name for FP-BGA.

Sep. 17. 1998

Nov. 5. 1998

Final

Item

Changed

Symbol

ex) K6R1016V1C-Z -> K6R1016V1C-F

Rev. 2.2

Rev. 3.0

Changed device ball name for FP-BGA.

Dec. 10. 1998

Mar. 2. 1999

Final

I/O1 ~ I/O8

I/O9 ~ I/O16

Changed

I/O9 ~ I/O16

I/O1 ~ I/O8

1. Added 10ns speed for FP-BGA only.

2. Changed Standby Current.

Item

0.3mA

Changed

0.5mA

Standby Current(Isb1)

3. Added Data Retention Characteristics.

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions,

please contact the SAMSUNG branch office near your office, call or contact Headquarters.

Revision 3.0

March 1999

- 1 -

12 3 4 5 6 7...11

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