for AT&T
CMOS SRAM
K6R1016V1C-C/C-L, K6R1016V1C-I/C-P
Document Title
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating)
Operated at Commercial and Industrial Temperature Ranges.
Revision History
Rev. No.
Rev. 0.0
Rev. 1.0
History
Remark
Preliminary
Final
Draft Data
Aug. 5. 1998
Sep. 7. 1998
Initial release with Preliminary.
Release to Final Data Sheet.
1.1. Delete Preliminary.
1.2. Changed DC characteristics.
Item
Previous
85mA
83mA
Changed
95mA
93mA
ICC
12ns
15ns
20ns
80mA
90mA
Rev. 2.0
Rev. 2.1
Added 48-fine pitch BGA.
Changed device part name for FP-BGA.
Sep. 17. 1998
Nov. 5. 1998
Final
Final
Item
Symbol
Previous
Changed
F
Z
ex) K6R1016V1C-Z -> K6R1016V1C-F
Rev. 2.2
Rev. 3.0
Changed device ball name for FP-BGA.
Dec. 10. 1998
Mar. 2. 1999
Final
Final
Previous
I/O1 ~ I/O8
I/O9 ~ I/O16
Changed
I/O9 ~ I/O16
I/O1 ~ I/O8
1. Added 10ns speed for FP-BGA only.
2. Changed Standby Current.
Item
Previous
0.3mA
Changed
0.5mA
Standby Current(Isb1)
3. Added Data Retention Characteristics.
Rev. 3.1
Rev. 3.2
Added 10ns speed for all packages(44SOJ / 44TSOP2 / 48FPBGA)
Apr. 24. 2000
Aug. 25. 2000
Final
Final
Supply Voltage Change
1. Only 10ns Bin : 3.15V ~ 3.6V
2. The Rest Bin : 3.0V ~ 3.6V
Rev. 3.3
VIH/VIL Change
Oct. 2. 2000
Final
Previous
Changed
Max
Item
Min
2.0
Max
Min
2.0
VIH
VIL
VCC+0.5
0.8
VCC+0.3
0.8
-0.5
-0.3
Rev. 4.0
Delete 20ns speed bin
Sep. 24. 2001
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. Ifyou have any questions,
please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Revision 4.0
- 1 -
September 2001