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K4T51083QG-HCLF7 PDF预览

K4T51083QG-HCLF7

更新时间: 2024-11-19 07:17:11
品牌 Logo 应用领域
三星 - SAMSUNG 动态存储器双倍数据速率
页数 文件大小 规格书
47页 1018K
描述
512Mb G-die DDR2 SDRAM Specification

K4T51083QG-HCLF7 数据手册

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K4T51043QG  
K4T51083QG  
K4T51163QG  
DDR2 SDRAM  
512Mb G-die DDR2 SDRAM Specification  
60FBGA & 84FBGA with Lead-Free and Halogen-Free  
(RoHS compliant)  
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,  
AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE  
CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHER-  
WISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOL-  
OGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT  
GUARANTEE OR WARRANTY OF ANY KIND.  
1. For updates or additional information about Samsung products, contact your nearest Samsung office.  
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar  
applications where Product failure could result in loss of life or personal or physical harm, or any military or  
defense application, or any governmental procurement to which special terms or provisions may apply.  
* Samsung Electronics reserves the right to change products or specification without notice.  
Rev. 1.4 December 2008  
1 of 47  

与K4T51083QG-HCLF7相关器件

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K4T51083QG-HLCC SAMSUNG

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DDR DRAM, 64MX8, 0.6ns, CMOS, PBGA60,
K4T51083QG-HLCC0 SAMSUNG

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DDR DRAM, 64MX8, 0.6ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60
K4T51083QG-HLE6 SAMSUNG

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DDR DRAM, 64MX8, 0.45ns, CMOS, PBGA60,
K4T51083QG-HLE6T SAMSUNG

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DDR DRAM, 64MX8, 0.45ns, CMOS, PBGA60
K4T51083QG-HLE7 SAMSUNG

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DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60,
K4T51083QG-HLE7T SAMSUNG

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DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60
K4T51083QG-HLF7 SAMSUNG

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DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60,
K4T51083QI SAMSUNG

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Consumer Memory
K4T51083QI-HCE6 SAMSUNG

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DDR DRAM, 64MX8, 0.45ns, CMOS, PBGA60
K4T51083QI-HCE6T SAMSUNG

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DDR DRAM, 64MX8, 0.45ns, CMOS, PBGA60