Datasheet > K4S56323PF-FF900

K4S56323PF-FF900

更新时间： 2023-01-15 00:00:00

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器
页数	文件大小	规格书
12页	143K
描述
Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, FBGA-90

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K4S56323PF-FF900 数据手册

K4S56323PF-F(H)G/F

Mobile-SDRAM

DC CHARACTERISTICS

Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25 to 85°C for Extended, -25 to 70°C for Commercial)

Version

Parameter

Symbol

Test Condition

Unit Note

-75

-90

-1L

Burst length = 1

tRC ≥ tRC(min)

IO = 0 mA

Operating Current

(One Bank Active)

ICC1

ICC2P CKE ≤ VIL(max), tCC = 10ns

0.3

Precharge Standby Current in

power-down mode

ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞

CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

ICC2N

Input signals are changed one time during 20ns

Precharge Standby Current

in non power-down mode

CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

ICC2NS

Input signals are stable

ICC3P CKE ≤ VIL(max), tCC = 10ns

Active Standby Current

in power-down mode

ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞

CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

ICC3N

Active Standby Current

in non power-down mode

(One Bank Active)

Input signals are changed one time during 20ns

CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

ICC3NS

Input signals are stable

IO = 0 mA

Operating Current

(Burst Mode)

Page burst

4Banks Activated

ICC4

100

tCCD = 2CLKs

Refresh Current

ICC5

ICC6

tARFC ≥ tARFC(min)

160

Internal TCSR

Full Array

Max 40

200

Max 85/70

450

°C

Self Refresh Current

CKE ≤ 0.2V

1/2 of Full Array

1/4 of Full Array

160

300

140

250

NOTES:

1. Measured with outputs open.

2. Refresh period is 64ms.

3. Internal TCSR can be supported.

In comercial Temp : Max 40°C/Max 70°C. In extended Temp : Max 40°C/Max 85°C.

4. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).

September 2004

1 2 3 456 7 8...12

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