Datasheet > K4S56323PF-FF900

K4S56323PF-FF900

更新时间： 2023-01-15 00:00:00

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器
页数	文件大小	规格书
12页	143K
描述
Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, FBGA-90

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K4S56323PF-FF900 数据手册

K4S56323PF-F(H)G/F

Mobile-SDRAM

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

VIN, VOUT

VDD, VDDQ

TSTG

Value

-1.0 ~ 2.6

-55 ~ +150

1.0

Unit

Voltage on any pin relative to Vss

Voltage on VDD supply relative to Vss

Storage temperature

°C

Power dissipation

Short circuit current

IOS

NOTES:

Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.

Functional operation should be restricted to recommended operating condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

DC OPERATING CONDITIONS

Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25 to 85°C for Extended, -25 to 70°C for Commercial)

Parameter

Symbol

VDD

VDDQ

VIH

Min

Typ

Max

Unit

Note

1.7

1.8

1.95

Supply voltage

1.7

1.8

1.95

Input logic high voltage

Input logic low voltage

Output logic high voltage

Output logic low voltage

Input leakage current

NOTES :

0.8 x VDDQ

VDDQ + 0.3

VIL

-0.3

0.3

VOH

VOL

VDDQ -0.2

IOH = -0.1mA

IOL = 0.1mA

0.2

ILI

-2

1. VIH (max) = 2.2V AC.The overshoot voltage duration is ≤ 3ns.

2. VIL (min) = -1.0V AC. The undershoot voltage duration is ≤ 3ns.

3. Any input 0V ≤ VIN ≤ VDDQ.

Input leakage currents include Hi-Z output leakage for all bi-directional buffers with tri-state outputs.

4. Dout is disabled, 0V ≤ VOUT ≤ VDDQ.

CAPACITANCE (VDD = 1.8V, TA = 23°C, f = 1MHz, VREF =0.9V ± 50 mV)

Symbol

CCLK

CIN

Min

1.5

3.0

Max

3.0

5.0

Unit

Note

Clock

RAS, CAS, WE, CS, CKE

DQM

CIN

Address

CADD

COUT

DQ0 ~ DQ31

September 2004

1 2 345 6 7...12

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