Datasheet > K4S280832D-NC7C

K4S280832D-NC7C

更新时间： 2024-02-21 11:06:19

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器光电二极管内存集成电路
页数	文件大小	规格书
11页	113K
描述
Synchronous DRAM, 16MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.441 INCH, 0.40 MM PITCH, STSOP2-54

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K4S280832D-NC7C 技术参数

K4S280832D

Revision History

CMOS SDRAM

Revision 0.0 (July, 2001)

Revision 0.1 (Sep., 2001)

•

Redefined IDD1 & IDD4 in DC Characteristics

Changed the Notes in Operating AC Parameter.

< Before >

5. For 1H/1L, tRDL=1CLK and tDAL=1CLK+tRP is also supported .

SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + tRP.

< After >

5.In 100MHz and below 100MHz operating conditions, tRDL=1CLK and tDAL=1CLK + 20ns is also supported.

SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + tRP.

Rev. 0.1 Sept. 2001

123 4 5 6 7...11

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型号	品牌	获取价格	描述	数据表
K4S280832D-NL1L	SAMSUNG	获取价格	Synchronous DRAM, 16MX8, 6ns, CMOS, PDSO54, 0.400 X 0.441 INCH, 0.40 MM PITCH, STSOP2-54
K4S280832D-NL75	SAMSUNG	获取价格	Synchronous DRAM, 16MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.441 INCH, 0.40 MM PITCH, STSOP2-54
K4S280832D-NL7C	SAMSUNG	获取价格	Synchronous DRAM, 16MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.441 INCH, 0.40 MM PITCH, STSOP2-54
K4S280832D-TB1H	SAMSUNG	获取价格	Synchronous DRAM, 16MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
K4S280832D-TB75	SAMSUNG	获取价格	Synchronous DRAM, 16MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
K4S280832D-TC/L1H	SAMSUNG	获取价格	128Mbit SDRAM (4M x 8Bit x 4 Banks Synchronous DRAM)
K4S280832D-TC/L1L	SAMSUNG	获取价格	128Mbit SDRAM (4M x 8Bit x 4 Banks Synchronous DRAM)
K4S280832D-TC/L75	SAMSUNG	获取价格	128Mbit SDRAM (4M x 8Bit x 4 Banks Synchronous DRAM)
K4S280832D-TC/L7C	SAMSUNG	获取价格	128Mbit SDRAM (4M x 8Bit x 4 Banks Synchronous DRAM)
K4S280832D-TC1H	SAMSUNG	获取价格	Synchronous DRAM, 16MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54