Datasheet > K4S161622D-TC/L55

K4S161622D-TC/L55

更新时间： 2024-11-29 22:32:35

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器
页数	文件大小	规格书
41页	1075K
描述
512K x 16Bit x 2 Banks Synchronous DRAM

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K4S161622D

CMOS SDRAM

512K x 16Bit x 2 Banks Synchronous DRAM

FEATURES

GENERAL DESCRIPTION

• 3.3V power supply

The K4S161622D is 16,777,216 bits synchronous high data

rate Dynamic RAM organized as 2 x 524,288 words by 16 bits,

fabricated with SAMSUNG¢s high performance CMOS technol-

ogy. Synchronous design allows precise cycle control with the

use of system clock I/O transactions are possible on every clock

cycle. Range of operating frequencies, programmable burst

length and programmable latencies allow the same device to be

useful for a variety of high bandwidth, high performance mem-

ory system applications.

• LVTTL compatible with multiplexed address

• Dual banks operation

• MRS cycle with address key programs

-. CAS Latency ( 2 & 3)

-. Burst Length (1, 2, 4, 8 & full page)

-. Burst Type (Sequential & Interleave)

• All inputs are sampled at the positive going edge of the system

clock

• Burst Read Single-bit Write operation

• DQM for masking

ORDERING INFORMATION

• Auto & self refresh

Part NO.

MAX Freq.

183MHz

166MHz

143MHz

125MHz

100MHz

Interface Package

• 15.6us refresh duty cycle (2K/32ms)

K4S161622D-TC/L55

K4S161622D-TC/L60

K4S161622D-TC/L70

K4S161622D-TC/L80

K4S161622D-TC/L10

LVTTL

TSOP(II)

FUNCTIONAL BLOCK DIAGRAM

LWE

Data Input Register

LDQM

Bank Select

512K x 16

DQi

CLK

ADD

Column Decoder

Latency & Burst Length

LCKE

Programming Register

LWCBR

LRAS

LCBR

LWE

LCAS

LDQM

Timing Register

CLK

CKE

RAS

CAS

L(U)DQM

Samsung Electronics reserves the right to

change products or specification without

notice.

12 3 4 5 6 7...41

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与K4S161622D-TC/L55相关器件

型号	品牌	获取价格	描述	数据表
K4S161622D-TC/L60	SAMSUNG	获取价格	512K x 16Bit x 2 Banks Synchronous DRAM
K4S161622D-TC/L70	SAMSUNG	获取价格	512K x 16Bit x 2 Banks Synchronous DRAM
K4S161622D-TC/L80	SAMSUNG	获取价格	512K x 16Bit x 2 Banks Synchronous DRAM
K4S161622D-TC10	SAMSUNG	获取价格	Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50
K4S161622D-TC70	SAMSUNG	获取价格	Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50
K4S161622D-TC80	SAMSUNG	获取价格	Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50
K4S161622D-TI/E10	SAMSUNG	获取价格	1M x 16 SDRAM
K4S161622D-TI/E50	SAMSUNG	获取价格	1M x 16 SDRAM
K4S161622D-TI/E55	SAMSUNG	获取价格	1M x 16 SDRAM
K4S161622D-TI/E60	SAMSUNG	获取价格	1M x 16 SDRAM