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K4N56163QG-ZC20T PDF预览

K4N56163QG-ZC20T

更新时间: 2024-11-20 08:01:55
品牌 Logo 应用领域
三星 - SAMSUNG 动态存储器双倍数据速率
页数 文件大小 规格书
64页 1258K
描述
DDR DRAM, 16MX16, 0.35ns, CMOS, PBGA84

K4N56163QG-ZC20T 数据手册

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256M gDDR2 SDRAM  
K4N56163QG  
256Mbit gDDR2 SDRAM  
Revision 1.4  
December 2006  
Notice  
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,  
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.  
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,  
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,  
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL  
INFORMATION IN THIS DOCUMENT IS PROVIDED  
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.  
1. For updates or additional information about Samsung products, contact your nearest Samsung office.  
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar  
applications where Product failure could result in loss of life or personal or physical harm, or any military or  
defense application, or any governmental procurement to which special terms or provisions may apply.  
* Samsung Electronics reserves the right to change products or specification without notice.  
Rev. 1.4 Dec. 2006  
- 1/64 -  

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DDR DRAM, 16MX16, 0.35ns, CMOS, PBGA84, FBGA-84
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DDR DRAM, 16MX16, 0.35ns, CMOS, PBGA84,
K4N56163QI-ZC20T SAMSUNG

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K4N56163QI-ZC220 SAMSUNG

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K4N56163QI-ZC25 SAMSUNG

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DDR DRAM, 16MX16, 0.4ns, CMOS, PBGA84,
K4N56163QI-ZC2A SAMSUNG

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DRAM