Datasheet > K4P160411C-B

K4P160411C-B

更新时间： 2024-11-19 21:04:07

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器
页数	文件大小	规格书
20页	396K
描述
DRAM

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技术参数
数据手册

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K4P160411C-B 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.75
Base Number Matches：	1

K4P160411C-B 数据手册

K4P170411C, K4P160411C

CMOS DRAM

4M x 4Bit CMOS Quad CAS DRAM with Fast Page Mode

DESCRIPTION

This is a family of 4,194,304 x 4 bit Quad CAS with Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access

of memory cells within the same row. Refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60), power consumption(Normal or Low

power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only

refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. Four separate CAS pins provide for

seperate I/O operation allowing this device to operate in parity mode.

This 4Mx4 Fast Page Mode Quad CAS DRAM family is fabricated using Samsung¢s advanced CMOS process to realize high band-

width, low power consumption and high reliability.

FEATURES

• Fast Page Mode operation

• Four seperate CAS pins provide for separate I/O operation

• Part Identification

• CAS-before-RAS refresh capability

• RAS-only and Hidden refresh capability

• Self-refresh capability (L-ver only)

• Fast paralleltest mode capability

- K4P170411C-B(F) (5V, 4K Ref.)

- K4P160411C-B(F) (5V, 2K Ref.)

• TTL compatible inputs and outputs

• Early Write or output enable controlled write

• JEDEC Standard pinout

• Active Power Dissipation

Unit : mW

Refresh Cycle

Speed

• Available in Plastic SOJ and TSOP(II) packages

• Single +5V±10% power supply

-50

-60

495

440

605

550

FUNCTIONAL BLOCK DIAGRAM

• Refresh Cycles

Part

NO.

Refresh

cycle

Refresh period

RAS

CAS0 - 3

Vcc

Vss

Control

Clocks

Normal

L-ver

VBB Generator

K4P170411C

K4P160411C

64ms

32ms

128ms

Data in

Buffer

Row Decoder

Refresh Timer

Refresh Control

DQ0

DQ3

Memory Array

4,194,304 x 4

Cells

• Performance Range

Refresh Counter

Row Address Buffer

Col. Address Buffer

Speed

-50

Remark

tRAC

50ns

60ns

tCAC

tRC

90ns

tPC

A0-A11

(A0 - A10)*1

A0 - A9

13ns

35ns 5V/3.3V

Data out

Buffer

Column Decoder

-60

15ns 110ns 40ns 5V/3.3V

(A0 - A10)*1

Note) *1 : 2K Refresh

SAMSUNG ELECTRONICS CO., LTD. reserves the right to

change products and specifications without notice.

12 3 4 5 6 7...20

中文翻译

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与K4P160411C-B相关器件

型号	品牌	获取价格	描述	数据表
K4P160411C-B5000	SAMSUNG	获取价格	Fast Page DRAM, 4MX4, 50ns, CMOS, PDSO28, SOJ-28
K4P160411C-B6000	SAMSUNG	获取价格	Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO28, SOJ-28
K4P160411C-BC50	SAMSUNG	获取价格	Fast Page DRAM, 4MX4, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28
K4P160411C-BC60	SAMSUNG	获取价格	Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28
K4P160411C-BC600	SAMSUNG	获取价格	Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28
K4P160411C-BL50	SAMSUNG	获取价格	Fast Page DRAM, 4MX4, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28
K4P160411C-BL60	SAMSUNG	获取价格	Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28
K4P160411C-BL600	SAMSUNG	获取价格	Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28
K4P160411C-F	SAMSUNG	获取价格	DRAM
K4P160411C-F5000	SAMSUNG	获取价格	Fast Page DRAM, 4MX4, 50ns, CMOS, PDSO28, TSOP2-28

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