Datasheet > K4N51163QE-ZC25T

K4N51163QE-ZC25T

更新时间： 2024-01-09 16:37:26

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器
页数	文件大小	规格书
64页	1401K
描述
Cache DRAM Module, 32MX16, 0.4ns, CMOS, PBGA84

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K4N51163QE-ZC25T 数据手册

512M gDDR2 SDRAM

K4N51163QE

512Mbit gDDR2 SDRAM

Revision 1.2

May 2007

Notice

INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL

INFORMATION IN THIS DOCUMENT IS PROVIDED

ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.

1. For updates or additional information about Samsung products, contact your nearest Samsung office.

2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar

applications where Product failure could result in loss of life or personal or physical harm, or any military or

defense application, or any governmental procurement to which special terms or provisions may apply.

* Samsung Electronics reserves the right to change products or specification without notice.

Rev 1.2 May 2007

- 1 -

12 3 4 5 6 7...64

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型号	品牌	获取价格	描述	数据表
K4N51163QE-ZC2A	SAMSUNG	获取价格	Cache DRAM Module, 32MX16, 0.45ns, CMOS, PBGA84
K4N51163QG	SAMSUNG	获取价格	Graphic Memory
K4N51163QG-HC200	SAMSUNG	获取价格	DDR DRAM, 32MX16, 0.35ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84
K4N51163QG-HC25T	SAMSUNG	获取价格	DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84,
K4N51163QZ	SAMSUNG	获取价格	Graphic Memory
K4N51163QZ-HC200	SAMSUNG	获取价格	DDR DRAM, 32MX16, 0.35ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84
K4N51163QZ-HC20T	SAMSUNG	获取价格	DDR DRAM, 32MX16, 0.35ns, CMOS, PBGA84,
K4N51163QZ-HC250	SAMSUNG	获取价格	DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84
K4N56163QF	SAMSUNG	获取价格	256Mbit gDDR2 SDRAM
K4N56163QF-GC	SAMSUNG	获取价格	256Mbit gDDR2 SDRAM