Datasheet > K4M641633K-RG1LT

K4M641633K-RG1LT

更新时间： 2024-11-12 08:56:39

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器
页数	文件大小	规格书
12页	113K
描述
Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

K4M641633K-RG1LT 数据手册

K4M641633K - R(B)N/G/L/F

Mobile-SDRAM

1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

FEATURES

GENERAL DESCRIPTION

• 3.0V & 3.3V power supply.

The K4M641633K is 67,108,864 bits synchronous high data

rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,

fabricated with SAMSUNG’s high performance CMOS technol-

ogy. Synchronous design allows precise cycle control with the

use of system clock and I/O transactions are possible on every

clock cycle. Range of operating frequencies, programmable

burst lengths and programmable latencies allow the same

device to be useful for a variety of high bandwidth and high per-

formance memory system applications.

• LVCMOS compatible with multiplexed address.

• Four banks operation.

• MRS cycle with address key programs.

-. CAS latency (1, 2 & 3).

-. Burst length (1, 2, 4, 8 & Full page).

-. Burst type (Sequential & Interleave).

• EMRS cycle with address key programs.

• All inputs are sampled at the positive going edge of the system

clock.

• Burst read single-bit write operation.

• Special Function Support.

-. PASR (Partial Array Self Refresh).

-. Internal TCSR (Temperature Compensated Self Refresh)

-. DS (Driver Strength)

• DQM for masking.

• Auto refresh.

• 64ms refresh period (4K cycle).

• Commercial Temperature Operation (-25°C ~ 70°C).

• Extended Temperature Operation (-25°C ~ 85°C).

• 54Balls FBGA( -RXXX -Pb, -BXXX -Pb Free).

ORDERING INFORMATION

Part No.

Max Freq.

Interface

Package

K4M641633K-R(B)N/G/L/F75

K4M641633K-R(B)N/G/L/F1H

K4M641633K-R(B)N/G/L/F1L

133MHz(CL=3),111MHz(CL=2)

111MHz(CL=2)

54 FBGA Pb

(Pb Free)

LVCMOS

111MHz(CL=3)^*1,83MHz(CL=2)

- R(B)N/G : Low Power, Extended Temperature(-25°C ~ 85°C)

- R(B)L/F : Low Power, Commercial Temperature(-25°C ~ 70°C)

NOTES :

1. In case of 40MHz Frequency, CL1 can be supported.

2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake.

Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific pur

pose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.

January 2006

12 3 4 5 6 7...12

中文翻译

下载PDF

与K4M641633K-RG1LT相关器件

型号	品牌	获取价格	描述	数据表
K4M641633K-RG75	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54
K4M641633K-RL1H0	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, FBGA-54
K4M641633K-RL1HT	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54
K4M641633K-RL75T	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54
K4M641633K-RN1L	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54
K4M641633K-RN750	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, FBGA-54
K4M641633K-RN75T	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54
K4M64163LK-BF1HT	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54
K4M64163LK-BF1L0	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, LEAD FREE, FBGA-54
K4M64163LK-BF75	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54

与K4M641633K-RG1LT相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

23
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

7
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

8
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

31

产品中心

服务支持

精选活动

关于我们

帮助中心

K4M641633K-RG1LT

K4M641633K-RG1LT 数据手册

与K4M641633K-RG1LT相关器件

与K4M641633K-RG1LT相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

K4M641633K-RG1LT

K4M641633K-RG1LT 数据手册

与K4M641633K-RG1LT相关器件

与K4M641633K-RG1LT相关文章

您还可以找

您在本页遇到什么问题？