Datasheet > K4M283233H-HG7L0

K4M283233H-HG7L0

更新时间： 2024-11-11 18:35:51

品牌	Logo	应用领域
三星 - SAMSUNG		时钟动态存储器内存集成电路
页数	文件大小	规格书
12页	142K
描述
Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90

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技术参数
数据手册

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K4M283233H-HG7L0 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	BGA	包装说明：	VFBGA, BGA90,9X15,32
针数：	90	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8542.32.00.02
风险等级：	5.83	访问模式：	FOUR BANK PAGE BURST
最长访问时间：	5.4 ns	其他特性：	AUTO/SELF REFRESH
最大时钟频率 (fCLK)：	133 MHz	I/O 类型：	COMMON
交错的突发长度：	1,2,4,8	JESD-30 代码：	R-PBGA-B90
长度：	13 mm	内存密度：	134217728 bit
内存集成电路类型：	SYNCHRONOUS DRAM	内存宽度：	32
湿度敏感等级：	3	功能数量：	1
端口数量：	1	端子数量：	90
字数：	4194304 words	字数代码：	4000000
工作模式：	SYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-25 °C	组织：	4MX32
输出特性：	3-STATE	封装主体材料：	PLASTIC/EPOXY
封装代码：	VFBGA	封装等效代码：	BGA90,9X15,32
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
峰值回流温度（摄氏度）：	260	电源：	3/3.3 V
认证状态：	Not Qualified	刷新周期：	4096
座面最大高度：	1 mm	自我刷新：	YES
连续突发长度：	1,2,4,8,FP	最大待机电流：	0.0005 A
子类别：	DRAMs	最大压摆率：	0.12 mA
最大供电电压 (Vsup)：	3.6 V	最小供电电压 (Vsup)：	2.7 V
标称供电电压 (Vsup)：	3 V	表面贴装：	YES
技术：	CMOS	温度等级：	OTHER
端子形式：	BALL	端子节距：	0.8 mm
端子位置：	BOTTOM	处于峰值回流温度下的最长时间：	40
宽度：	8 mm	Base Number Matches：	1

K4M283233H-HG7L0 数据手册

K4M283233H - F(H)N/G/L/F

Mobile SDRAM

1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

FEATURES

GENERAL DESCRIPTION

• 3.0V & 3.3V power supply.

The K4M283233H is 134,217,728 bits synchronous high data

rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits,

fabricated with SAMSUNG’s high performance CMOS technol-

ogy. Synchronous design allows precise cycle control with the

use of system clock and I/O transactions are possible on every

clock cycle. Range of operating frequencies, programmable

burst lengths and programmable latencies allow the same

device to be useful for a variety of high bandwidth and high per-

formance memory system applications.

• LVCMOS compatible with multiplexed address.

• Four banks operation.

• MRS cycle with address key programs.

-. CAS latency (1, 2 & 3).

-. Burst length (1, 2, 4, 8 & Full page).

-. Burst type (Sequential & Interleave).

• EMRS cycle with address key programs.

• All inputs are sampled at the positive going edge of the system

clock.

• Burst read single-bit write operation.

• Special Function Support.

-. PASR (Partial Array Self Refresh).

-. Internal TCSR (Temperature Compensated Self Refresh)

-. DS (Driver Strength)

• DQM for masking.

• Auto refresh.

• 64ms refresh period (4K cycle).

• Commercial Temperature Operation (-25°C ~ 70°C).

• Extended Temperature Operation (-25°C ~ 85°C).

• 90Balls FBGA ( -FXXX -Pb, -HXXX -Pb Free).

ORDERING INFORMATION

Part No.

Max Freq.

Interface

Package

K4M283233H-F(H)N/G/L/F60

K4M283233H-F(H)N/G/L/F75

K4M283233H-F(H)N/G/L/F7L

166MHz(CL=3)

90 FBGA Pb

(Pb Free)

LVCMOS

133MHz(CL=3), 111MHz(CL=2)

133MHz(CL=3)^*1, 83MHz(CL=2)

- F(H)N/G : Low Power, Extended Temperature(-25°C ~ 85°C)

- F(H)L/F : Low Power, Commercial Temperature(-25°C ~ 70°C)

Notes :

1. In case of 40MHz Frequency, CL1 can be supported.

Address configuration

Organization

Bank

Row

A0 - A11

Column Address

4M x 32

BA0, BA1

A0 - A7

INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PRO-

VIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.

1. For updates or additional information about Samsung products, contact your nearest Samsung office.

2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could

result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or pro-

visions may apply.

January 2006

12 3 4 5 6 7...12

中文翻译

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与K4M283233H-HG7L0相关器件

型号	品牌	获取价格	描述	数据表
K4M283233H-HL60	SAMSUNG	获取价格	1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M283233H-HL600	SAMSUNG	获取价格	Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90
K4M283233H-HL60T	SAMSUNG	获取价格	暂无描述
K4M283233H-HL75	SAMSUNG	获取价格	1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M283233H-HL750	SAMSUNG	获取价格	Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90
K4M283233H-HL75T	SAMSUNG	获取价格	Synchronous DRAM, 4MX32, 7.5ns, CMOS, PBGA90
K4M283233H-HL7L	SAMSUNG	获取价格	1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M283233H-HL7L0	SAMSUNG	获取价格	Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90
K4M283233H-HL7LT	SAMSUNG	获取价格	Synchronous DRAM, 4MX32, 7.5ns, CMOS, PBGA90
K4M283233H-HN600	SAMSUNG	获取价格	Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90

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