Datasheet > 存储 > DRAM> K4M283233H-FG60

K4M283233H-FG60

更新时间： 2024-11-11 04:22:31

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器
页数	文件大小	规格书
12页	143K
描述
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

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技术参数
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K4M283233H-FG60 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	FBGA, BGA90,9X15,32	Reach Compliance Code：	unknown
风险等级：	5.92	最长访问时间：	60 ns
最大时钟频率 (fCLK)：	166 MHz	I/O 类型：	COMMON
交错的突发长度：	1,2,4,8	JESD-30 代码：	R-PBGA-B90
内存密度：	134217728 bit	内存集成电路类型：	SYNCHRONOUS DRAM
内存宽度：	32	端子数量：	90
字数：	4194304 words	字数代码：	4000000
最高工作温度：	85 °C	最低工作温度：	-25 °C
组织：	4MX32	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	FBGA
封装等效代码：	BGA90,9X15,32	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, FINE PITCH	电源：	3/3.3 V
认证状态：	Not Qualified	刷新周期：	4096
连续突发长度：	1,2,4,8,FP	最大待机电流：	0.0005 A
子类别：	DRAMs	最大压摆率：	0.14 mA
表面贴装：	YES	技术：	CMOS
温度等级：	OTHER	端子形式：	BALL
端子节距：	0.8 mm	端子位置：	BOTTOM

K4M283233H-FG60 数据手册

K4M283233H - F(H)N/G/L/F

Mobile SDRAM

1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

FEATURES

GENERAL DESCRIPTION

• 3.0V & 3.3V power supply.

The K4M283233H is 134,217,728 bits synchronous high data

rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits,

fabricated with SAMSUNG’s high performance CMOS technol-

ogy. Synchronous design allows precise cycle control with the

use of system clock and I/O transactions are possible on every

clock cycle. Range of operating frequencies, programmable

burst lengths and programmable latencies allow the same

device to be useful for a variety of high bandwidth and high per-

formance memory system applications.

• LVCMOS compatible with multiplexed address.

• Four banks operation.

• MRS cycle with address key programs.

-. CAS latency (1, 2 & 3).

-. Burst length (1, 2, 4, 8 & Full page).

-. Burst type (Sequential & Interleave).

• EMRS cycle with address key programs.

• All inputs are sampled at the positive going edge of the system

clock.

• Burst read single-bit write operation.

• Special Function Support.

-. PASR (Partial Array Self Refresh).

-. Internal TCSR (Temperature Compensated Self Refresh)

-. DS (Driver Strength)

• DQM for masking.

• Auto refresh.

• 64ms refresh period (4K cycle).

• Commercial Temperature Operation (-25°C ~ 70°C).

• Extended Temperature Operation (-25°C ~ 85°C).

• 90Balls FBGA ( -FXXX -Pb, -HXXX -Pb Free).

ORDERING INFORMATION

Part No.

Max Freq.

Interface

Package

K4M283233H-F(H)N/G/L/F60

K4M283233H-F(H)N/G/L/F75

K4M283233H-F(H)N/G/L/F7L

166MHz(CL=3)

90 FBGA Pb

(Pb Free)

LVCMOS

133MHz(CL=3), 111MHz(CL=2)

133MHz(CL=3)^*1, 83MHz(CL=2)

- F(H)N/G : Low Power, Extended Temperature(-25°C ~ 85°C)

- F(H)L/F : Low Power, Commercial Temperature(-25°C ~ 70°C)

Notes :

1. In case of 40MHz Frequency, CL1 can be supported.

Address configuration

Organization

Bank

Row

A0 - A11

Column Address

4M x 32

BA0, BA1

A0 - A7

INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PRO-

VIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.

1. For updates or additional information about Samsung products, contact your nearest Samsung office.

2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could

result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or pro-

visions may apply.

January 2006

12 3 4 5 6 7...12

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与K4M283233H-FG60相关器件

型号	品牌	获取价格	描述	数据表
K4M283233H-FG60T	SAMSUNG	获取价格	Synchronous DRAM, 4MX32, 60ns, CMOS, PBGA90
K4M283233H-FG75	SAMSUNG	获取价格	1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M283233H-FG750	SAMSUNG	获取价格	Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, FBGA-90
K4M283233H-FG7L	SAMSUNG	获取价格	1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M283233H-FG7L0	SAMSUNG	获取价格	Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, FBGA-90
K4M283233H-FG7LT	SAMSUNG	获取价格	Synchronous DRAM, 4MX32, 7.5ns, CMOS, PBGA90
K4M283233H-FL60	SAMSUNG	获取价格	1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M283233H-FL600	SAMSUNG	获取价格	Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, FBGA-90
K4M283233H-FL60T	SAMSUNG	获取价格	Synchronous DRAM, 4MX32, 60ns, CMOS, PBGA90
K4M283233H-FL75	SAMSUNG	获取价格	1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

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