K4M28163PH-RF90

更新时间： 2024-11-11 04:22:31

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器
页数	文件大小	规格书
12页	116K
描述
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

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K4M28163PH-RF90 数据手册

K4M28163PH - R(B)E/G/C/F

Mobile SDRAM

2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

FEATURES

GENERAL DESCRIPTION

• 1.8V power supply.

The K4M28163PH is 134,217,728 bits synchronous high data

rate Dynamic RAM organized as 4 x 2,098,152 words by 16 bits,

fabricated with SAMSUNG’s high performance CMOS technol-

ogy. Synchronous design allows precise cycle control with the

use of system clock and I/O transactions are possible on every

clock cycle. Range of operating frequencies, programmable

burst lengths and programmable latencies allow the same

device to be useful for a variety of high bandwidth and high per-

formance memory system applications.

• LVCMOS compatible with multiplexed address.

• Four banks operation.

• MRS cycle with address key programs.

-. CAS latency (1, 2 & 3).

-. Burst length (1, 2, 4, 8 & Full page).

-. Burst type (Sequential & Interleave).

• EMRS cycle with address key programs.

• All inputs are sampled at the positive going edge of the system

clock.

• Burst read single-bit write operation.

• Special Function Support.

-. PASR (Partial Array Self Refresh).

-. Internal TCSR (Temperature Compensated Self Refresh)

-. DS (Driver Strength)

-. DPD (Deep Power Down)

• DQM for masking.

• Auto refresh.

• 64ms refresh period (4K cycle).

• Commercial Temperature Operation (-25°C ~ 70°C).

• Extended Temperature Operation (-25°C ~ 85°C).

• 54Balls FBGA ( -RXXX -Pb, -BXXX -Pb Free).

ORDERING INFORMATION

Part No.

Max Freq.

Interface

Package

K4M28163PH-R(B)E/G/C/F75

K4M28163PH-R(B)E/G/C/F90

K4M28163PH-R(B)E/G/C/F1L

133MHz(CL3), 83MHz(CL2)

111MHz(CL3), 83MHz(CL2)

54 FBGA Pb

(Pb Free)

LVCMOS

111MHz(CL3)^*1, 66MHz(CL2)

- R(B)E/G : Normal/Low Power, Extended Temperature(-25°C ~ 85°C)

- R(B)C/F : Normal/Low Power, Commercial Temperature(-25°C ~ 70°C)

Notes :

1. In case of 40MHz Frequency, CL1 can be supported.

Address configuration

Organization

Bank

Row

A0 - A11

Column Address

8M x 16

BA0, BA1

A0 - A8

INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PRO-

VIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.

1. For updates or additional information about Samsung products, contact your nearest Samsung office.

2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could

result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or pro-

visions may apply.

March 2006

12 3 4 5 6 7...12

中文翻译

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与K4M28163PH-RF90相关器件

型号	品牌	获取价格	描述	数据表
K4M28163PH-RF900	SAMSUNG	获取价格	Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, FBGA-54
K4M28163PH-RF90T	SAMSUNG	获取价格	Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54
K4M28163PH-RG	SAMSUNG	获取价格	2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M28163PH-RG1L	SAMSUNG	获取价格	Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54
K4M28163PH-RG750	SAMSUNG	获取价格	Synchronous DRAM, 8MX16, 6ns, CMOS, PBGA54, FBGA-54
K4M28163PH-RG75T	SAMSUNG	获取价格	Synchronous DRAM, 8MX16, 6ns, CMOS, PBGA54
K4M28163PH-RG90	SAMSUNG	获取价格	Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54
K4M28163PH-RG900	SAMSUNG	获取价格	Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, FBGA-54
K4M28163PH-RG90T	SAMSUNG	获取价格	Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54
K4M283233H	SAMSUNG	获取价格	1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

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