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K4H560838F-TCCC0 PDF预览

K4H560838F-TCCC0

更新时间: 2024-11-07 05:59:35
品牌 Logo 应用领域
三星 - SAMSUNG 动态存储器双倍数据速率光电二极管
页数 文件大小 规格书
24页 366K
描述
DDR DRAM, 32MX8, 0.65ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66

K4H560838F-TCCC0 数据手册

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DDR SDRAM 256Mb F-die (x8, x16)  
DDR SDRAM  
256Mb F-die DDR SDRAM Specification  
66 TSOP-II  
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,  
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.  
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,  
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,  
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL  
INFORMATION IN THIS DOCUMENT IS PROVIDED  
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.  
1. For updates or additional information about Samsung products, contact your nearest Samsung office.  
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar  
applications where Product failure could result in loss of life or personal or physical harm, or any military or  
defense application, or any governmental procurement to which special terms or provisions may apply.  
3. Any system or application incorporating Samsung Memory Product(s) shall be designed to use or access the  
memory addresses in a balanced and proportionate manner. Disproportionate, excessive and/or repeated  
access to a particular address may result in reduction of product life.  
* Samsung Electronics reserves the right to change products or specification without notice.  
Rev. 1.4 July. 2005  

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