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K4H560438J-LLB0 PDF预览

K4H560438J-LLB0

更新时间: 2024-11-12 07:44:19
品牌 Logo 应用领域
三星 - SAMSUNG 动态存储器双倍数据速率光电二极管
页数 文件大小 规格书
24页 358K
描述
DDR DRAM, 64MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-66

K4H560438J-LLB0 数据手册

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K4H560438J  
K4H560838J  
K4H561638J  
DDR SDRAM  
256Mb J-die DDR SDRAM Specification  
66 TSOP-II  
with Lead-Free and Halogen-Free  
(RoHS compliant)  
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,  
AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE  
CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHER-  
WISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOL-  
OGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT  
GUARANTEE OR WARRANTY OF ANY KIND.  
1. For updates or additional information about Samsung products, contact your nearest Samsung office.  
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar  
applications where Product failure could result in loss of life or personal or physical harm, or any military or  
defense application, or any governmental procurement to which special terms or provisions may apply.  
* Samsung Electronics reserves the right to change products or specification without notice.  
Rev. 1.12 August 2008  
1 of 24  

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DDR DRAM, 64MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM, HALOGEN FREE AND ROHS
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Consumer Memory