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K4H560438D-TCA0 PDF预览

K4H560438D-TCA0

更新时间: 2024-01-20 05:06:58
品牌 Logo 应用领域
三星 - SAMSUNG 存储内存集成电路光电二极管动态存储器双倍数据速率时钟
页数 文件大小 规格书
53页 669K
描述
128Mb DDR SDRAM

K4H560438D-TCA0 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP2包装说明:TSOP2, TSSOP66,.46
针数:66Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.24
风险等级:5.92Is Samacsys:N
访问模式:FOUR BANK PAGE BURST最长访问时间:0.8 ns
其他特性:AUTO/SELF REFRESH最大时钟频率 (fCLK):100 MHz
I/O 类型:COMMON交错的突发长度:2,4,8
JESD-30 代码:R-PDSO-G66JESD-609代码:e0
长度:22.22 mm内存密度:268435456 bit
内存集成电路类型:DDR DRAM内存宽度:4
功能数量:1端口数量:1
端子数量:66字数:67108864 words
字数代码:64000000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:64MX4输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装等效代码:TSSOP66,.46封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE峰值回流温度(摄氏度):NOT SPECIFIED
电源:2.5 V认证状态:Not Qualified
刷新周期:8192座面最大高度:1.2 mm
自我刷新:YES连续突发长度:2,4,8
最大待机电流:0.003 A子类别:DRAMs
最大压摆率:0.22 mA最大供电电压 (Vsup):2.7 V
最小供电电压 (Vsup):2.3 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:10.16 mmBase Number Matches:1

K4H560438D-TCA0 数据手册

 浏览型号K4H560438D-TCA0的Datasheet PDF文件第1页浏览型号K4H560438D-TCA0的Datasheet PDF文件第2页浏览型号K4H560438D-TCA0的Datasheet PDF文件第3页浏览型号K4H560438D-TCA0的Datasheet PDF文件第5页浏览型号K4H560438D-TCA0的Datasheet PDF文件第6页浏览型号K4H560438D-TCA0的Datasheet PDF文件第7页 
128Mb DDR SDRAM  
Contents  
2
9
Revision History  
General Information  
10  
10  
10  
1. Key Features  
1.1 Features  
1.2 Operating Frequencies  
2. Package Pinout & Dimension  
11  
11  
12  
13  
2.1 Package Pintout  
2.2 Input/Output Function Description  
2.3 66 Pin TSOP(II)/MS-024FC Package Physical Dimension  
14  
14  
3. Functional Description  
3.1 Simplified State Diagram  
15  
15  
16  
16  
18  
19  
19  
20  
20  
20  
3.2 Basic Functionality  
3.2.1 Power-Up Sequence  
3.2.2 Mode Register Definition  
3.2.2.1 Mode Register Set(MRS)  
3.2.2.2 Extended Mode Register Set(EMRS)  
3.2.3 Precharge  
3.2.4 No Operation(NOP) & Device Deselect  
3.2.5 Row Active  
3.2.6 Read Bank  
3.2.7 Write Bank  
21  
21  
22  
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23  
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25  
3.3 Essential Functionality for DDR SDRAM  
3.3.1 Burst Read Operation  
3.3.2 Burst Write Operation  
3.3.3 Read Interrupted by a Read  
3.3.4 Read Interrupted by a Write & Burst Stop  
3.3.5 Read Interrupted by a Precharge  
3.3.6 Write Interrupted by a Write  
- 4 -  
REV. 1.0 November. 2. 2000  

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