是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TSOP2 | 包装说明: | TSOP2, |
针数: | 66 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.02 |
风险等级: | 5.49 | 访问模式: | FOUR BANK PAGE BURST |
最长访问时间: | 0.75 ns | 其他特性: | AUTO/SELF REFRESH |
JESD-30 代码: | R-PDSO-G66 | JESD-609代码: | e6 |
长度: | 22.22 mm | 内存密度: | 134217728 bit |
内存集成电路类型: | DDR DRAM | 内存宽度: | 8 |
湿度敏感等级: | 3 | 功能数量: | 1 |
端口数量: | 1 | 端子数量: | 66 |
字数: | 16777216 words | 字数代码: | 16000000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 16MX8 | |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TSOP2 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE, THIN PROFILE |
峰值回流温度(摄氏度): | 260 | 认证状态: | Not Qualified |
座面最大高度: | 1.2 mm | 自我刷新: | YES |
最大供电电压 (Vsup): | 2.7 V | 最小供电电压 (Vsup): | 2.3 V |
标称供电电压 (Vsup): | 2.5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子面层: | Tin/Bismuth (Sn/Bi) | 端子形式: | GULL WING |
端子节距: | 0.65 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 10.16 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4H280838F-UCB3 | SAMSUNG |
获取价格 |
128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) | |
K4H280838F-UCB30 | SAMSUNG |
获取价格 |
DDR DRAM, 16MX8, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2- | |
K4H280838F-ULA2 | SAMSUNG |
获取价格 |
128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) | |
K4H280838F-ULB0 | SAMSUNG |
获取价格 |
128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) | |
K4H280838F-ULB00 | SAMSUNG |
获取价格 |
DDR DRAM, 16MX8, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2 | |
K4H280838F-ULB3 | SAMSUNG |
获取价格 |
128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) | |
K4H280838F-ULB30 | SAMSUNG |
获取价格 |
DDR DRAM, 16MX8, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2- | |
K4H280838M-TCA0 | SAMSUNG |
获取价格 |
128Mb DDR SDRAM | |
K4H280838M-TCA2 | SAMSUNG |
获取价格 |
128Mb DDR SDRAM | |
K4H280838M-TCB0 | SAMSUNG |
获取价格 |
128Mb DDR SDRAM |