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K4H280838F-UCB00 PDF预览

K4H280838F-UCB00

更新时间: 2024-11-24 21:20:27
品牌 Logo 应用领域
三星 - SAMSUNG 动态存储器双倍数据速率光电二极管内存集成电路
页数 文件大小 规格书
23页 298K
描述
DDR DRAM, 16MX8, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66

K4H280838F-UCB00 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TSOP2包装说明:TSOP2,
针数:66Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.02
风险等级:5.49访问模式:FOUR BANK PAGE BURST
最长访问时间:0.75 ns其他特性:AUTO/SELF REFRESH
JESD-30 代码:R-PDSO-G66JESD-609代码:e6
长度:22.22 mm内存密度:134217728 bit
内存集成电路类型:DDR DRAM内存宽度:8
湿度敏感等级:3功能数量:1
端口数量:1端子数量:66
字数:16777216 words字数代码:16000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:16MX8
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:1.2 mm自我刷新:YES
最大供电电压 (Vsup):2.7 V最小供电电压 (Vsup):2.3 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Bismuth (Sn/Bi)端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:10.16 mm
Base Number Matches:1

K4H280838F-UCB00 数据手册

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DDR SDRAM 128Mb F-die (x4, x8)  
DDR SDRAM  
128Mb F-die DDR SDRAM Specification  
66 TSOP-II with Pb-Free  
(RoHS compliant)  
Revision 1.0  
May 2004  
Rev. 1.1 May. 2004  

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