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K4H280838F-UCB3 PDF预览

K4H280838F-UCB3

更新时间: 2024-11-23 22:47:47
品牌 Logo 应用领域
三星 - SAMSUNG 动态存储器双倍数据速率
页数 文件大小 规格书
23页 298K
描述
128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

K4H280838F-UCB3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:TSSOP, TSSOP66,.46
Reach Compliance Code:compliant风险等级:5.84
最长访问时间:0.7 ns最大时钟频率 (fCLK):166 MHz
I/O 类型:COMMON交错的突发长度:2,4,8
JESD-30 代码:R-PDSO-G66内存密度:134217728 bit
内存集成电路类型:DDR DRAM内存宽度:8
湿度敏感等级:3端子数量:66
字数:16777216 words字数代码:16000000
最高工作温度:70 °C最低工作温度:
组织:16MX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP66,.46封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH峰值回流温度(摄氏度):260
电源:2.5 V认证状态:Not Qualified
刷新周期:4096连续突发长度:2,4,8
最大待机电流:0.003 A子类别:DRAMs
最大压摆率:0.3 mA标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:GULL WING
端子节距:0.635 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

K4H280838F-UCB3 数据手册

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DDR SDRAM 128Mb F-die (x4, x8)  
DDR SDRAM  
128Mb F-die DDR SDRAM Specification  
66 TSOP-II with Pb-Free  
(RoHS compliant)  
Revision 1.0  
May 2004  
Rev. 1.1 May. 2004  

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