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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| K4H280838F-TCB3 | SAMSUNG |
获取价格 |
DDR DRAM, 16MX8, 0.7ns, CMOS, PDSO66 |
|
| K4H280838F-TLA2 | SAMSUNG |
获取价格 |
DDR DRAM, 16MX8, 0.75ns, CMOS, PDSO66 |
|
| K4H280838F-TLA20 | SAMSUNG |
获取价格 |
DDR DRAM, 16MX8, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 |
|
| K4H280838F-TLB0 | SAMSUNG |
获取价格 |
DDR DRAM, 16MX8, 0.75ns, CMOS, PDSO66 |
|
| K4H280838F-TLB3 | SAMSUNG |
获取价格 |
DDR DRAM, 16MX8, 0.7ns, CMOS, PDSO66 |
|
| K4H280838F-UCA2 | SAMSUNG |
获取价格 |
128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
|
| K4H280838F-UCA20 | SAMSUNG |
获取价格 |
DDR DRAM, 16MX8, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2 |
|
| K4H280838F-UCB0 | SAMSUNG |
获取价格 |
128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
|
| K4H280838F-UCB00 | SAMSUNG |
获取价格 |
DDR DRAM, 16MX8, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2 |
|
| K4H280838F-UCB3 | SAMSUNG |
获取价格 |
128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) |
|
解析光耦仿真器：升级光耦合器技术的必要性
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国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
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