Datasheet > K4F640412E-TL60T

K4F640412E-TL60T

更新时间： 2024-11-10 09:40:11

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器光电二极管
页数	文件大小	规格书
20页	169K
描述
Fast Page DRAM, 16MX4, 60ns, CMOS, PDSO32

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

K4F640412E-TL60T 数据手册

K4F660412E,K4F640412E

CMOS DRAM

16M x 4bit CMOS Dynamic RAM with Fast Page Mode

DESCRIPTION

This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory

cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power)

are optional features of this family. All of this family have CAS -before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.

Furthermore, Self-refresh operation is available in L-version. This 16Mx4 Fast Page Mode DRAM family is fabricated using Samsung¢s

advanced CMOS process to realize high band-width, low power consumption and high reliability.

FEATURES

• Fast Page Mode operation

• Part Identification

- K4F660412E-JC/L(3.3V, 8K Ref., SOJ)

- K4F640412E-JC/L(3.3V, 4K Ref., SOJ)

- K4F660412E-TC/L(3.3V, 8K Ref., TSOP)

- K4F640412E-TC/L(3.3V, 4K Ref., TSOP)

• CAS-before-RAS refresh capability

• RAS-only and Hidden refresh capability

• Self-refresh capability (L-ver only)

• Fast parallel test mode capability

• LVTTL(3.3V) compatible inputs and outputs

• Early Write or output enable controlled write

• JEDEC Standard pinout

• Active Power Dissipation

Unit :mW

• Available in Plastic SOJ and TSOP(II) packages

• +3.3V ±0.3V power supply

Speed

-45

324

288

252

432

396

360

-50

-60

• Refresh Cycles

FUNCTIONAL BLOCK DIAGRAM

Part

NO.

Refresh

cycle

Refresh time

Normal

L-ver

K4F660412E*

K4F640412E

RAS

CAS

Vcc

Vss

64ms

128ms

Control

Clocks

VBB Generator

* Access mode & RAS only refresh mode

: 8K cycle/64ms(Normal), 8K cycle/128ms(L-ver.)

CAS -before-RAS & Hidden refresh mode

: 4K cycle/64ms(Normal), 4K cycle/128ms(L-ver.)

Row Decoder

Refresh Timer

Refresh Control

Data in

Buffer

Memory Array

16,777,216 x 4

Cells

DQ0

DQ3

Refresh Counter

Row Address Buffer

Col. Address Buffer

• Performance Range

Speed

-45

tRAC

45ns

50ns

60ns

tCAC

12ns

13ns

15ns

tRC

tPC

Data out

Buffer

A0~A12

(A0~A11)*1

80ns

90ns

110ns

31ns

35ns

40ns

A0~A10

(A0~A11)*1

Column Decoder

-50

-60

Note) *1 : 4K Refresh

SAMSUNG ELECTRONICS CO., LTD. reserves the right to

change products and specifications without notice.

12 3 4 5 6 7...20

中文翻译

下载PDF

与K4F640412E-TL60T相关器件

型号	品牌	获取价格	描述	数据表
K4F640412E-TP50	SAMSUNG	获取价格	Fast Page DRAM, 16MX4, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32
K4F640811B	SAMSUNG	获取价格	8M x 8bit CMOS Dynamic RAM with Fast Page Mode
K4F640811B-JC45	SAMSUNG	获取价格	暂无描述
K4F640811B-JC450	SAMSUNG	获取价格	Fast Page DRAM, 8MX8, 45ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
K4F640811B-JC50	SAMSUNG	获取价格	Fast Page DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
K4F640811B-JC500	SAMSUNG	获取价格	Fast Page DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
K4F640811B-JC60	SAMSUNG	获取价格	Fast Page DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
K4F640811B-TC45	SAMSUNG	获取价格	Fast Page DRAM, 8MX8, 45ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32
K4F640811B-TC50	SAMSUNG	获取价格	Fast Page DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32
K4F640811D-TC600	SAMSUNG	获取价格	Fast Page DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32

与K4F640412E-TL60T相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

22
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

21
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

47
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

39

产品中心

服务支持

精选活动

关于我们

帮助中心

K4F640412E-TL60T

K4F640412E-TL60T 数据手册

与K4F640412E-TL60T相关器件

与K4F640412E-TL60T相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

K4F640412E-TL60T

K4F640412E-TL60T 数据手册

与K4F640412E-TL60T相关器件

与K4F640412E-TL60T相关文章

您还可以找

您在本页遇到什么问题？