Industrial Temperature
K4E660812E,K4E640812E
CMOS DRAM
DC AND OPERATING CHARACTERISTICS (Continued)
Max
Symbol
Power
Speed
Units
K4E660812E
K4E640812E
-45
-50
-60
90
80
70
120
110
100
mA
mA
mA
ICC1
ICC2
ICC3
Don¢t care
Normal
L
1
1
1
1
mA
mA
Don¢t care
-45
-50
-60
90
80
70
120
110
100
mA
mA
mA
Don¢t care
Don¢t care
-45
-50
-60
100
90
80
100
90
80
mA
mA
mA
ICC4
ICC5
ICC6
Normal
L
0.5
200
0.5
200
mA
uA
Don¢t care
-45
-50
-60
120
110
100
120
110
100
mA
mA
mA
Don¢t care
ICC7
ICCS
L
L
Don¢t care
Don¢t care
350
350
350
350
uA
uA
ICC1* : Operating Current (RAS and CAS, Address cycling @tRC=min.)
ICC2 : Standby Current (RAS=CAS=W=V IH)
ICC3* : RAS-only Refresh Current (CAS =VIH, RAS cycling @tRC=min.)
ICC4* : Extended Data Out Mode Current (RAS=VIL , CAS, Address cycling @tHPC=min.)
ICC5 : Standby Current (RAS=CAS=W=V CC-0.2V)
ICC6* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @tRC=min)
ICC7 : Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, CAS=CAS-before-RAS cycling or 0.2V
W, OE=VIH, Address=Don¢t care, DQ=Open, TRC=31.25us
ICCS : Self Refresh Current
RAS=CAS=0.2V, W=OE=A0 ~ A12(A11)=VCC-0.2V or 0.2V, DQ0 ~ DQ7=VCC-0.2V, 0.2V or Open
*Note :
ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS=V IL. In ICC4,
address can be changed maximum once within one EDO mode cycle time, tHPC.