是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | SOJ, SOJ42,.44 | Reach Compliance Code: | compliant |
风险等级: | 5.83 | 最长访问时间: | 60 ns |
I/O 类型: | COMMON | JESD-30 代码: | R-PDSO-J42 |
内存密度: | 16777216 bit | 内存集成电路类型: | EDO DRAM |
内存宽度: | 16 | 端子数量: | 42 |
字数: | 1048576 words | 字数代码: | 1000000 |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 1MX16 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | SOJ |
封装等效代码: | SOJ42,.44 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 电源: | 5 V |
认证状态: | Not Qualified | 刷新周期: | 4096 |
自我刷新: | NO | 最大待机电流: | 0.001 A |
子类别: | DRAMs | 最大压摆率: | 0.09 mA |
标称供电电压 (Vsup): | 5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子形式: | J BEND | 端子节距: | 1.27 mm |
端子位置: | DUAL | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4E171611D-JC60T | SAMSUNG |
获取价格 |
EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, | |
K4E171611D-TC45 | SAMSUNG |
获取价格 |
EDO DRAM, 1MX16, 45ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44 | |
K4E171611D-TC450 | SAMSUNG |
获取价格 |
EDO DRAM, 1MX16, 45ns, CMOS, PDSO44, | |
K4E171611D-TC50 | SAMSUNG |
获取价格 |
EDO DRAM, 1MX16, 50ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44 | |
K4E171611D-TC500 | SAMSUNG |
获取价格 |
EDO DRAM, 1MX16, 50ns, CMOS, PDSO44, | |
K4E171611D-TC50T | SAMSUNG |
获取价格 |
EDO DRAM, 1MX16, 50ns, CMOS, PDSO44, | |
K4E171611D-TC60T | SAMSUNG |
获取价格 |
EDO DRAM, 1MX16, 60ns, CMOS, PDSO44, | |
K4E171612C-J4500 | SAMSUNG |
获取价格 |
EDO DRAM, 1MX16, 45ns, CMOS, PDSO42, SOJ-42 | |
K4E171612C-J5000 | SAMSUNG |
获取价格 |
EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, SOJ-42 | |
K4E171612C-J6000 | SAMSUNG |
获取价格 |
EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, SOJ-42 |