是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | BGA |
包装说明: | TBGA, | 针数: | 144 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.28 | 风险等级: | 5.92 |
访问模式: | FOUR BANK PAGE BURST | 最长访问时间: | 0.5 ns |
其他特性: | AUTO/SELF REFRESH | JESD-30 代码: | R-PBGA-B144 |
JESD-609代码: | e0 | 长度: | 15.5 mm |
内存密度: | 301989888 bit | 内存集成电路类型: | DDR DRAM |
内存宽度: | 36 | 功能数量: | 1 |
端口数量: | 1 | 端子数量: | 144 |
字数: | 8388608 words | 字数代码: | 8000000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | 组织: | 8MX36 | |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TBGA |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, THIN PROFILE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 认证状态: | Not Qualified |
座面最大高度: | 1.2 mm | 自我刷新: | YES |
最大供电电压 (Vsup): | 2.625 V | 最小供电电压 (Vsup): | 2.375 V |
标称供电电压 (Vsup): | 2.5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | OTHER |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | BALL |
端子节距: | 1 mm | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 10.5 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4C89363AF-GCG70 | SAMSUNG |
获取价格 |
DDR DRAM, 8MX36, 0.5ns, CMOS, PBGA144, FBGA-144 | |
K4C89363AF-GIF50 | SAMSUNG |
获取价格 |
DDR DRAM, 8MX36, 0.6ns, CMOS, PBGA144, 1 MM PITCH, FBGA-144 | |
K4C89363AF-GIF60 | SAMSUNG |
获取价格 |
DDR DRAM, 8MX36, 0.5ns, CMOS, PBGA144, FBGA-144 | |
K4C89363AF-GIFB0 | SAMSUNG |
获取价格 |
DDR DRAM, 8MX36, 0.5ns, CMOS, PBGA144, FBGA-144 | |
K4C89363AF-GIG70 | SAMSUNG |
获取价格 |
DDR DRAM, 8MX36, 0.5ns, CMOS, PBGA144, FBGA-144 | |
K4C89363AF-TCF5 | SAMSUNG |
获取价格 |
2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM | |
K4C89363AF-TCF6 | SAMSUNG |
获取价格 |
2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM | |
K4C89363AF-TCFB | SAMSUNG |
获取价格 |
2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM | |
K4D261638 | SAMSUNG |
获取价格 |
128Mbit GDDR SDRAM | |
K4D261638E | SAMSUNG |
获取价格 |
2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |