K4B4G1646B-HPK0 PDF预览

K4B4G1646B-HPK0

更新时间: 2025-11-04 00:53:35
品牌 Logo 应用领域
三星 - SAMSUNG 动态存储器双倍数据速率
页数 文件大小 规格书
64页 1002K
描述
4Gb B-die DDR3 SDRAM Olny x16

K4B4G1646B-HPK0 数据手册

 浏览型号K4B4G1646B-HPK0的Datasheet PDF文件第12页浏览型号K4B4G1646B-HPK0的Datasheet PDF文件第13页浏览型号K4B4G1646B-HPK0的Datasheet PDF文件第14页浏览型号K4B4G1646B-HPK0的Datasheet PDF文件第16页浏览型号K4B4G1646B-HPK0的Datasheet PDF文件第17页浏览型号K4B4G1646B-HPK0的Datasheet PDF文件第18页 
Rev. 1.0  
K4B4G1646B  
datasheet  
DDR3 SDRAM  
8.4 Differential Input Cross Point Voltage  
To guarantee tight setup and hold times as well as output skew parameters with respect to clock and strobe, each cross point voltage of differential input  
signals (CK, CK and DQS, DQS) must meet the requirements in below table. The differential input cross point voltage VIX is measured from the actual  
cross point of true and complement signal to the mid level between of VDD and VSS  
.
VDD  
CK, DQS  
VIX  
VDD/2  
VIX  
VIX  
CK, DQS  
VSS  
VSEH  
VSEL  
Figure 4. VIX Definition  
[ Table 12 ] Cross point voltage for differential input signals (CK, DQS)  
DDR3-800/1066/1333/1600/1866/2133  
Symbol  
Parameter  
Unit  
NOTE  
Min  
-150  
-175  
-150  
Max  
150  
175  
150  
mV  
mV  
mV  
2
1
2
VIX  
VIX  
Differential Input Cross Point Voltage relative to VDD/2 for CK,CK  
Differential Input Cross Point Voltage relative to VDD/2 for DQS,DQS  
NOTE :  
1. Extended range for V is only allowed for clock and if single-ended clock input signals CKand CK are monotonic, have a single-ended swing V  
/ V  
of at least V /2  
DD  
IX  
SEL  
SEH  
±250 mV, and the differential slew rate of CK-CK is larger than 3 V/ ns. Refer to Table 11 on page 15 for V  
and V  
standard values.  
SEL  
SEH  
2. The relation between V Min/Max and V  
/V  
should satisfy following.  
IX  
SEL SEH  
(V /2) + V (Min) - V 25mV  
DD  
IX  
SEL  
V
- ((V /2) + V (Max)) 25mV  
SEH  
DD IX  
8.5 Slew rate definition for Differential Input Signals  
See 14.3 “Address/Command Setup, Hold and Derating :” on page 48 for single-ended slew rate definitions for address and command signals.  
See 14.4 “Data Setup, Hold and Slew Rate Derating :” on page 54 for single-ended slew rate definitions for data signals.  
8.6 Slew rate definitions for Differential Input Signals  
Input slew rate for differential signals (CK, CK and DQS, DQS) are defined and measured as shown in Table 13 and Figure 5.  
[ Table 13 ] Differential input slew rate definition  
Measured  
Description  
Defined by  
From  
To  
VIHdiffmin - VILdiffmax  
Delta TRdiff  
VILdiffmax  
VIHdiffmin  
Differential input slew rate for rising edge (CK-CK and DQS-DQS)  
VIHdiffmin - VILdiffmax  
Delta TFdiff  
VIHdiffmin  
VILdiffmax  
Differential input slew rate for falling edge (CK-CK and DQS-DQS)  
NOTE :  
The differential signal (i.e. CK - CK and DQS - DQS) must be linear between these thresholds.  
V
IHdiffmin  
ILdiffmax  
0
V
delta TFdiff  
delta TRdiff  
Figure 5. Differential Input Slew Rate definition for DQS, DQS, and CK, CK  
- 15 -  

与K4B4G1646B-HPK0相关器件

型号 品牌 获取价格 描述 数据表
K4B4G1646E SAMSUNG

获取价格

4Gb E-die DDR3L SDRAM
K4B4G1646E-BMK0 SAMSUNG

获取价格

4Gb E-die DDR3L SDRAM
K4B4G1646E-BMMA SAMSUNG

获取价格

4Gb E-die DDR3L SDRAM
K4B4G1646E-BYK0 SAMSUNG

获取价格

4Gb E-die DDR3L SDRAM
K4B4G1646E-BYMA SAMSUNG

获取价格

4Gb E-die DDR3L SDRAM
K4B4G1646Q SAMSUNG

获取价格

4Gb Q-die DDR3L SDRAM Olny x16 96FBGA with Lead-Free & Halogen-Free (RoHS compliant) 1.35V
K4B4G1646Q-HYF8 SAMSUNG

获取价格

4Gb Q-die DDR3L SDRAM Olny x16 96FBGA with Lead-Free & Halogen-Free (RoHS compliant) 1.35V
K4B4G1646Q-HYH9 SAMSUNG

获取价格

4Gb Q-die DDR3L SDRAM Olny x16 96FBGA with Lead-Free & Halogen-Free (RoHS compliant) 1.35V
K4B4G1646Q-HYK0 SAMSUNG

获取价格

4Gb Q-die DDR3L SDRAM Olny x16 96FBGA with Lead-Free & Halogen-Free (RoHS compliant) 1.35V
K4C560838C-TCA SAMSUNG

获取价格

Synchronous DRAM, 32MX8, 0.85ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, PLASTIC,