是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | FBGA, BGA78,9X13,32 | Reach Compliance Code: | compliant |
风险等级: | 5.75 | 最长访问时间: | 0.4 ns |
最大时钟频率 (fCLK): | 400 MHz | I/O 类型: | COMMON |
JESD-30 代码: | R-PBGA-B78 | 内存密度: | 2147483648 bit |
内存集成电路类型: | DDR DRAM | 内存宽度: | 8 |
端子数量: | 78 | 字数: | 268435456 words |
字数代码: | 256000000 | 最高工作温度: | 85 °C |
最低工作温度: | 组织: | 256MX8 | |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | FBGA | 封装等效代码: | BGA78,9X13,32 |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, FINE PITCH |
电源: | 1.5 V | 认证状态: | Not Qualified |
刷新周期: | 8192 | 最大待机电流: | 0.02 A |
子类别: | DRAMs | 最大压摆率: | 0.2 mA |
标称供电电压 (Vsup): | 1.5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | OTHER |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4B2G0846E-MCF7T | SAMSUNG |
获取价格 |
DDR DRAM, 256MX8, 0.4ns, CMOS, PBGA78, |
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K4B2G0846E-MCH9 | SAMSUNG |
获取价格 |
DDR DRAM, |
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K4B2G0846E-MCH90 | SAMSUNG |
获取价格 |
DDR DRAM, 256MX8, 0.255ns, CMOS, PBGA78, |
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K4B2G1646B | SAMSUNG |
获取价格 |
DDR3 SDRAM Memory |
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K4B2G1646C | SAMSUNG |
获取价格 |
Consumer Memory |
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K4B2G1646C-HCF8000 | SAMSUNG |
获取价格 |
2Gb C-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free (RoHS compliant) |
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K4B2G1646C-HCK00 | SAMSUNG |
获取价格 |
128MX16 DDR DRAM, 0.225ns, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 |
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K4B2G1646C-HCK0T | SAMSUNG |
获取价格 |
DDR DRAM, 128MX16, 0.225ns, CMOS, PBGA96 |
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K4B2G1646C-HCMA0 | SAMSUNG |
获取价格 |
128MX16 DDR DRAM, 0.195ns, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 |
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K4B2G1646C-HCMAT | SAMSUNG |
获取价格 |
DDR DRAM, 128MX16, 0.195ns, CMOS, PBGA96 |
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