Datasheet > JS28F256P33T95A

JS28F256P33T95A

更新时间： 2024-03-03 10:08:43

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
96页	1378K
描述
64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory

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JS28F256P33T95A 数据手册

Numonyx™ StrataFlash^®Embedded Memory (P33)

1.0

Introduction

This document provides information about the Numonyx™ StrataFlash^®Embedded

Memory (P33) device and describes its features, operation, and specifications.

P33 is the latest generation of Numonyx™ StrataFlash^®memory devices. Offered in

64-Mbit up through 512-Mbit densities, the P33 flash memory device brings reliable,

two-bit-per-cell storage technology to the embedded flash market segment. Benefits

include more density in less space, high-speed interface, lowest cost-per-bit NOR

device, and support for code and data storage. Features include high-performance

synchronous-burst read mode, fast asynchronous access times, low power, flexible

security options, and three industry standard package choices.

P33 product family is manufactured using Intel^*130 nm ETOX™ VIII process

technology. The P33 product family is also planned on the Numonyx™ 65nm process

lithography. 65nm AC timing changes are noted in this datasheet, and should be taken

into account for all new designs

1.1

Nomenclature

3.0 V :

9.0 V :

V_CC(core) and V_CCQ(I/O) voltage range of 2.3 V – 3.6 V

V_PPvoltage range of 8.5 V – 9.5 V

A group of bits, bytes, or words within the flash memory array that erase

simultaneously. The Numonyx™ StrataFlash^®Embedded Memory (P33) has two block

sizes: 32 KByte and 128 KByte.

Block :

An array block that is usually used to store code and/or data. Main blocks are larger

than parameter blocks.

Main block :

An array block that may be used to store frequently changing data or small system

parameters that traditionally would be stored in EEPROM.

Parameter block :

A device with its parameter blocks located at the highest physical address of its

memory map.

Top parameter device :

A device with its parameter blocks located at the lowest physical address of its

memory map.

Bottom parameter device :

1.2

Acronyms

BEFP :

CUI :

MLC :

OTP :

PLR :

PR :

Buffer Enhanced Factory Programming

Command User Interface

Multi-Level Cell

One-Time Programmable

Protection Lock Register

Protection Register

RCR :

RFU :

SR :

Read Configuration Register

Reserved for Future Use

Status Register

WSM :

Write State Machine

Datasheet

November 2007

Order Number: 314749-05

1...3 4 567 8 9...96

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