Datasheet > JMSL0609AKQ

JMSL0609AKQ

更新时间： 2023-12-06 19:45:51

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
6页	402K
描述
汽车 MOSFET

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JMSL0609AKQ 数据手册

JMSL0609AKQ

Electrical Characteristics (@ T_J= 25°C unless otherwise specified)

Parameter

Conditions

Symbol

Min.

Typ.

Max.

Unit

STATIC PARAMETERS

Drain-Source Breakdown Voltage

V_(BR)DSS

I_DSS

I_D= 250μA, V_GS= 0V

V_DS= 48V, V_GS= 0V

1.0

5.0

Zero Gate Voltage Drain Current

μA

T_J

= 55°C

_DS= 0V, V_GS= ±20V

Gate-Body Leakage Current

Gate Threshold Voltage

I_GSS

±100

2.5

V_GS(th)V_DS= V_GS, I_D= 250μA

1.2

1.6

7.4

9.5

V_GS= 10V, I_D= 20A

R_DS(ON)

9.4

mΩ

Static Drain-Source ON-Resistance

V_GS= 4.5V, I_D= 15A

12.4

V_DS= 5V, I_D= 20A

I_S= 1A, V_GS= 0V

T_C= 25°C

Forward Transconductance

Diode Forward Voltage

g_FS

V_SD

I_S

0.70

1.0

Diode Continuous Current

DYNAMIC PARAMETERS ⁽⁵⁾

Input Capacitance

C_iss

C_oss

C_rss

R_g

1110

352

12.0

1.3

_GS= 0V, V_DS= 30V, f = 1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

V_GS= 0V, V_DS= 0V, f = 1MHz

SWITCHING PARAMETERS ⁽⁵⁾

Total Gate Charge (@ V_GS= 10V)

Total Gate Charge (@ V_GS= 4.5V)

Q_g

Q_gs

Q_gd

t_D(on)

t_r

18.3

8.9

3.9

3.1

7.0

19.3

18.9

3.4

_GS= 0 to 10V

V_DS= 30V, I_D= 20A

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

V_GS= 10V, V_DS= 30V

R_L= 1.5Ω, R_GEN= 3Ω

Turn-Off DelayTime

t_D(off)

t_f

Turn-Off Fall Time

t_rr

I_F= 20A, dI_F/dt = 100A

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Q_rr

I_F= 20A, dI_F/dt = 100A

5.2

Thermal Performance

Parameter

Typ.

Max.

Symbol

R_θJA

Unit

°C/W

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

R_θJC

2.4

2.8

Notes:

1. Computed continuous current assumes the condition of T_{J_Max}while the actual continuous current depends on the thermal & electro-mechanical

application board design.

2. This single-pulse measurement was taken under T_{J_Max}= 175°C.

3. E_ASof 74 mJ is based on starting T_J= 25°C,L = 3.0mH, I_AS= 7A, V_GS= 10V, V_DD= 30V; 100% test at L = 0.1mH, I_AS= 26A.

_{J_Max}= 175°C.

4. The power dissipation P_Dis based on T_{J_Max}= 175°C.

5. This value is guaranteed by design hence it is not included in the production test.

JieJie Microelectronics Co., Ltd.

All product information are copyrighted and subject to legal disclaimers

Rev. 1.0

Page 2 of 6

123 4 5 6

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