JMSL0612AK
60V 9.9m N-Ch Power MOSFET
Product Summary
Features
Parameter
VDS
Value
Unit
V
•
•
•
•
•
Low RDS(ON)
Low Gate Charge
60
1.6
52
VGS(th)_Typ
ID (@ VGS = 10V) (1)
V
100% UIS Tested, 100% Rg Tested
Pb-free Lead Plating
A
RDS(ON)_Typ (@ VGS = 10V)
9.9
12.6
m
m
RDS(ON)_Typ (@ VGS = 4.5V)
Halogen-free and RoHS-compliant
Applications
•
•
•
Power Management in Computing, CE, IE 4.0, Communications
Current Switching in DC/DC & AC/DC (SR) Sub-systems
Load Switching, Quick/Wireless Charging, Motor Driving
TO-252-3L Top View
D
D
G
G
S
S
Ordering Information
Device
TJ (°C)
Package
# of Pins
Marking
MSL
Media
Quantity (pcs)
JMSL0612AK-13
TO-252-3L
3
SL0612A
1
-55 to 150 13-inch Reel
2500
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Value
Symbol
VDS
Unit
V
Drain-to-Source Voltage
Gate-to-Source Voltage
60
±20
52
VGS
V
TC = 25°C
Continuous Drain
Current (1)
ID
A
TC = 100°C
33
Pulsed Drain Current (2)
Avalanche Current (3)
Avalanche Energy (3)
IDM
IAS
207
20
A
A
EAS
20
mJ
TC = 25°C
57
Power Dissipation (4)
PD
W
TC = 100°C
23
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
°C
RDS(ON) vs. VGS
Gate Charge
30
10
8
ID = 20A
VDS = 30V
D = 20A
25
20
15
10
5
I
6
4
2
0
0
4
8
12
VGS (V)
16
20
0
3
6
9
12
15
Qg (nC)
JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Rev. 1.1
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