Datasheet > JMSL0620AGEQ

JMSL0620AGEQ

更新时间： 2023-12-06 20:03:53

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
6页	400K
描述
汽车 MOSFET

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JMSL0620AGEQ 数据手册

JMSL0620AGEQ

60V 16mΩ N-Ch Power MOSFET

Features

Product Summary

Parameter

V_DS

Value

Unit

•

Low ON Resistance, R_DS(ON)

Low Gate Charge, Q_g

V_{GS(th)_Typ}

I_D(@ V_GS= 10V) ⁽¹⁾

1.8

100% UIS and R_gTested

R_{DS(ON)_Typ}(@ V_GS= 10V)

ESD-enhanced Gate Pin @ HBM Class-2 of 1.1kV Typical

Pb-free Lead Plating, Halogen-free, RoHS-compliant

AEC-Q101 Qualified for Automotive Applications

16.0

mΩ

R_{DS(ON)_Typ}(@ V_GS= 4.5V)

PDFN5x6-8L

Pin Configuration

Top View

Bottom View

Gate

Protection

Ordering Information

Device

T_J(°C)

-55 to 175

Package

# of Pins

Marking

MSL

Media

Quantity (pcs)

JMSL0620AGEQ-13

PDFN5x6-8L

SL0620AQ

13-inch Reel

5000

Absolute Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Value

Symbol

V_DS

Unit

Drain-to-Source Voltage

Gate-to-Source Voltage

Human Body Model (per JESD22-A114)

±20

1.1

V_GS

V_{ESD_GS}

T_C= 25°C

Continuous Drain

Current ⁽¹⁾

I_D

T_C= 100°C

Pulsed Drain Current ⁽²⁾

Avalanche Energy ⁽³⁾

I_DM

E_AS

T_C= 25°C

Power Dissipation ⁽⁴⁾

P_D

T_C= 100°C

Junction & Storage Temperature Range

T_J, T_STG

-55 to 175

°C

R_DS(ON)vs. V_GS

Gate Charge

V_DS= 30V

I_D= 10A

Q_g(nC)

V_GS(V)

JieJie Microelectronics Co., Ltd.

All product information are copyrighted and subject to legal disclaimers

Rev. 1.1

Page 1 of 6

12 3 4 5 6

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