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JMSL0630AGD PDF预览

JMSL0630AGD

更新时间: 2024-11-23 14:52:39
品牌 Logo 应用领域
捷捷微 - JJM /
页数 文件大小 规格书
6页 386K
描述
中压 N-ch (40V ~ 400V)

JMSL0630AGD 数据手册

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JMSL0630AGD  
60V 22mDual N-Ch Power MOSFET  
Features  
Product Summary  
Parameter  
VDS  
Value  
60  
Unit  
V
Low RDS(ON)  
Low Gate Charge  
VGS(th)  
ID (@ VGS = 10V) (1)  
1.7  
23  
V
100% UIS Tested, 100% Rg Tested  
Pb-free Lead Plating  
A
RDS(ON) (@ VGS = 10V)  
22  
m  
m  
R
DS(ON) (@ VGS = 4.5V)  
28  
Halogen-free and RoHS-compliant  
Applications  
Power Managerment in Telecom., Industrial Automation, CE  
Motor Driving in Power Tool, E-vehicle, Robotics  
Current Switching in DC/DC & AC/DC (SR) Sub-systems  
PDFN5x6-8L-D  
Chip-1 & Chip-2  
D1  
Pin Configuration  
Top View  
Top View  
Bottom View  
D2  
S2  
G1  
G2  
S1  
Ordering Information  
Device  
TJ (°C)  
-55 to 150  
Package  
PDFN5x6-8L-D  
# of Pins  
Marking  
L0630AD  
MSL  
Media  
Quantity (pcs)  
JMSL0630AGD-13  
8
1
13-inch Reel  
5000  
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)  
Parameter  
Value  
Symbol  
VDS  
Unit  
V
Drain-to-Source Voltage  
Gate-to-Source Voltage  
60  
±20  
VGS  
V
TC = 25°C  
23  
Continuous Drain  
Current (1)  
ID  
A
TC = 100°C  
14.5  
53  
Pulsed Drain Current (2)  
Avalanche Energy (3)  
IDM  
A
EAS  
13.5  
28  
mJ  
TC = 25°C  
Power Dissipation (4)  
PD  
W
T
C = 100°C  
11.1  
-55 to 150  
Junction & Storage Temperature Range  
TJ, TSTG  
°C  
RDS(ON) vs. VGS  
Gate Charge  
60  
10  
8
ID = 5A  
VDS = 30V  
ID = 5A  
50  
40  
30  
20  
10  
6
4
2
0
0
5
10  
15  
20  
0
1
2
3
4
5
6
VGS (V)  
Qg (nC)  
JieJie Microelectronics Co., Ltd.  
All product information are copyrighted and subject to legal disclaimers  
Rev. 1.1  
Page 1 of 6  

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