JMSL0630AGD
60V 22m Dual N-Ch Power MOSFET
Features
Product Summary
Parameter
VDS
Value
60
Unit
V
•
•
•
•
•
Low RDS(ON)
Low Gate Charge
VGS(th)
ID (@ VGS = 10V) (1)
1.7
23
V
100% UIS Tested, 100% Rg Tested
Pb-free Lead Plating
A
RDS(ON) (@ VGS = 10V)
22
m
m
R
DS(ON) (@ VGS = 4.5V)
28
Halogen-free and RoHS-compliant
Applications
•
•
•
Power Managerment in Telecom., Industrial Automation, CE
Motor Driving in Power Tool, E-vehicle, Robotics
Current Switching in DC/DC & AC/DC (SR) Sub-systems
PDFN5x6-8L-D
Chip-1 & Chip-2
D1
Pin Configuration
Top View
Top View
Bottom View
D2
S2
G1
G2
S1
Ordering Information
Device
TJ (°C)
-55 to 150
Package
PDFN5x6-8L-D
# of Pins
Marking
L0630AD
MSL
Media
Quantity (pcs)
JMSL0630AGD-13
8
1
13-inch Reel
5000
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Value
Symbol
VDS
Unit
V
Drain-to-Source Voltage
Gate-to-Source Voltage
60
±20
VGS
V
TC = 25°C
23
Continuous Drain
Current (1)
ID
A
TC = 100°C
14.5
53
Pulsed Drain Current (2)
Avalanche Energy (3)
IDM
A
EAS
13.5
28
mJ
TC = 25°C
Power Dissipation (4)
PD
W
T
C = 100°C
11.1
-55 to 150
Junction & Storage Temperature Range
TJ, TSTG
°C
RDS(ON) vs. VGS
Gate Charge
60
10
8
ID = 5A
VDS = 30V
ID = 5A
50
40
30
20
10
6
4
2
0
0
5
10
15
20
0
1
2
3
4
5
6
VGS (V)
Qg (nC)
JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Rev. 1.1
Page 1 of 6