JMSL0609AP
60V 7.5m N-Ch Power MOSFET
Product Summary
Features
Parameter
VDS
Value
Unit
V
•
•
•
•
•
Low RDS(ON)
Low Gate Charge
60
1.7
13.6
7.5
9.5
VGS(th)_Typ
ID (@ VGS = 10V) (1)
V
100% UIS Tested, 100% Rg Tested
Pb-free Lead Plating
A
RDS(ON)_Typ (@ VGS = 10V)
m
m
RDS(ON)_Typ (@ VGS = 4.5V)
Halogen-free and RoHS-compliant
Applications
•
•
•
Power Management in Computing, CE, IE 4.0, Communications
Current Switching in DC/DC & AC/DC (SR) Sub-systems
Load Switching, Quick/Wireless Charging, Motor Driving
SOP-8L
Pin Configuration
Top View
Top View
Bottom View
D
G
S
Ordering Information
Device
TJ (°C)
Package
SOP-8L
# of Pins
Marking
MSL
Media
Quantity (pcs)
JMSL0609AP-13
8
SL0609A
3
-55 to 150 13-inch Reel
2500
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Value
Symbol
VDS
Unit
V
Drain-to-Source Voltage
Gate-to-Source Voltage
60
±20
VGS
V
TA = 25°C
13.6
10.9
39
Continuous Drain
Current (1)
ID
A
TA = 70°C
Pulsed Drain Current (2)
Avalanche Current (3)
Avalanche Energy (3)
IDM
IAS
A
A
26
EAS
34
mJ
TA = 25°C
3.1
Power Dissipation (4)
PD
W
T
A = 70°C
2.0
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
°C
RDS(ON) vs. VGS
Gate Charge
50
40
30
20
10
0
10
8
ID = 12A
VDS = 30V
D = 12A
I
6
4
2
0
0
4
8
12
Qg (nC)
16
20
0
2
4
6
8
10
VGS (V)
JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Rev. 1.1
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