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JMSL0601BG PDF预览

JMSL0601BG

更新时间: 2023-12-06 20:08:25
品牌 Logo 应用领域
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页数 文件大小 规格书
5页 397K
描述
中压 N-ch (40V ~ 400V)

JMSL0601BG 数据手册

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JMSL0601BG  
60V 1.25mN-Ch Power MOSFET  
Features  
Product Summary  
Low RDS(ON)  
Low Gate Charge  
Parameter  
VDS  
Value  
Unit  
V
60  
1.6  
VGS(th)_Typ  
V
100% UIS Tested, 100% Rg Tested  
Pb-free Lead Plating  
I
D (@ VGS = 10V) (1)  
226  
1.25  
1.8  
A
RDS(ON)_Typ (@ VGS = 10V)  
RDS(ON)_Typ (@ VGS = 4.5V)  
m  
m  
Halogen-free and RoHS-compliant  
Applications  
Power Management in Computing, CE, IE 4.0, Communications  
Current Switching in DC/DC & AC/DC (SR) Sub-systems  
Load Switching, Quick/Wireless Charging, Motor Driving  
PDFN5x6-8L  
Pin Configuration  
Top View  
Top View  
Bottom View  
D
S
1
8
7
6
5
2
3
G
4
Ordering Information  
Device  
TJ (°C)  
Package  
# of Pins  
Marking  
MSL  
Media  
Quantity (pcs)  
JMSL0601BG-13  
PDFN5x6-8L  
8
SL0601B  
1
-55 to 150 13-inch Reel  
5000  
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)  
Parameter  
Value  
Symbol  
VDS  
Unit  
V
Drain-to-Source Voltage  
Gate-to-Source Voltage  
60  
±20  
VGS  
V
TC = 25°C  
226  
Continuous Drain  
Current (1)  
ID  
A
TC = 100°C  
143  
Pulsed Drain Current (2)  
Avalanche Current (3)  
Avalanche Energy (3)  
IDM  
IAS  
638  
A
A
50  
EAS  
375  
mJ  
TC = 25°C  
147  
Power Dissipation (4)  
PD  
W
TC = 100°C  
59  
Junction & Storage Temperature Range  
TJ, TSTG  
-55 to 150  
°C  
RDS(ON) vs. VGS  
Gate Charge  
10  
8
5
VDS = 30V  
D = 20A  
ID = 20A  
I
4
3
2
1
0
6
4
2
0
0
20  
40  
60  
80  
0
5
10  
15  
20  
VGS (V)  
Qg (nC)  
JieJie Microelectronics Co., Ltd.  
All product information are copyrighted and subject to legal disclaimers  
Rev. 1.2  
Page 1 of 5  

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