JMSL0601BG
60V 1.25m N-Ch Power MOSFET
Features
Product Summary
•
•
•
•
•
Low RDS(ON)
Low Gate Charge
Parameter
VDS
Value
Unit
V
60
1.6
VGS(th)_Typ
V
100% UIS Tested, 100% Rg Tested
Pb-free Lead Plating
I
D (@ VGS = 10V) (1)
226
1.25
1.8
A
RDS(ON)_Typ (@ VGS = 10V)
RDS(ON)_Typ (@ VGS = 4.5V)
m
m
Halogen-free and RoHS-compliant
Applications
•
•
•
Power Management in Computing, CE, IE 4.0, Communications
Current Switching in DC/DC & AC/DC (SR) Sub-systems
Load Switching, Quick/Wireless Charging, Motor Driving
PDFN5x6-8L
Pin Configuration
Top View
Top View
Bottom View
D
S
1
8
7
6
5
2
3
G
4
Ordering Information
Device
TJ (°C)
Package
# of Pins
Marking
MSL
Media
Quantity (pcs)
JMSL0601BG-13
PDFN5x6-8L
8
SL0601B
1
-55 to 150 13-inch Reel
5000
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Value
Symbol
VDS
Unit
V
Drain-to-Source Voltage
Gate-to-Source Voltage
60
±20
VGS
V
TC = 25°C
226
Continuous Drain
Current (1)
ID
A
TC = 100°C
143
Pulsed Drain Current (2)
Avalanche Current (3)
Avalanche Energy (3)
IDM
IAS
638
A
A
50
EAS
375
mJ
TC = 25°C
147
Power Dissipation (4)
PD
W
TC = 100°C
59
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
°C
RDS(ON) vs. VGS
Gate Charge
10
8
5
VDS = 30V
D = 20A
ID = 20A
I
4
3
2
1
0
6
4
2
0
0
20
40
60
80
0
5
10
15
20
VGS (V)
Qg (nC)
JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Rev. 1.2
Page 1 of 5