Datasheet > JMSH1002NE

JMSH1002NE

更新时间： 2023-12-06 20:03:54

品牌	Logo	应用领域
捷捷微 - JJM		/
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6页	396K
描述
中压 N-ch (40V ~ 400V)

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JMSH1002NE 数据手册

JMSH1002NC

JMSH1002NE

Electrical Characteristics (@ T_J= 25°C unless otherwise specified)

Parameter

Conditions

Symbol

Min.

Typ.

Max.

Unit

STATIC PARAMETERS

Drain-Source Breakdown Voltage

V_(BR)DSSI_D= 250A, V_GS= 0V

100

106

V_DS= 80V, V_GS= 0V

I_DSS

1.0

5.0

Zero Gate Voltage Drain Current

A

T_J

= 55°C

V_DS= 0V, V_GS= ±20V

Gate-Body Leakage Current

Gate Threshold Voltage

I_GSS

±100

4.0

V_GS(th)V_DS= V_GS, I_D= 250A

2.0

2.8

2.2

2.4

TO-263-3L

TO-220-3L

2.8

m

R_DS(ON)V_GS= 10V, I_D= 20A

Static Drain-Source ON-Resistance

2.9

V_DS= 5V, I_D= 20A

I_S= 1A, V_GS= 0V

T_C= 25°C

Forward Transconductance

Diode Forward Voltage

g_FS

V_SD

I_S

0.66

1.0

Diode Continuous Current

284

DYNAMIC PARAMETERS ⁽⁵⁾

Input Capacitance

C_iss

C_oss

C_rss

R_g

9256

1318



_GS= 0V, V_DS= 50V, f = 1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

V_GS= 0V, V_DS= 0V, f = 1MHz

1.0

SWITCHING PARAMETERS ⁽⁵⁾

Total Gate Charge (@ V_GS= 10V)

Q_g

Q_gs

Q_gd

t_D(on)

t_r

131

250

Total Gate Charge (@ V_GS= 6.0V)

Gate Source Charge

V_GS= 0 to 10V

V_DS= 50V, I_D= 20A

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

V_GS= 10V, V_DS= 50V

R_L= 2.5, R_GEN= 3

Turn-Off DelayTime

t_D(off)

t_f

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

t_rr

I_F= 20A, dI_F/dt = 100A



Q_rr

/

Thermal Performance

Parameter

Typ.

Max.

Symbol

R_JA

Unit

°C/W

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

0.30

0.40

R_JC

Notes:

1. Computed continuous current assumes the condition of T_{J_Max}while the actual continuous current depends on the thermal & electro-mechanical

application board design.

2. This single-pulse measurement was taken under T_{J_Max}= 150°C.

3. E_ASof 1350 mJ is based on starting T_J= 25°C, L = 3.0mH, I_AS= 30A, V_GS= 10V, V_DD= 50V; 100% test at L = 0.3mH, I_AS= 62A.

_{J_Max}= 150°C.

4. The power dissipation P_Dis based on T_{J_Max}= 150°C.

5. This value is guaranteed by design hence it is not included in the production test.

Jiangsu JieJie Microelectronics Co., Ltd.

All product information are copyrighted and subject to legal disclaimers

Rev. 2.1

Page 2 of 6

123 4 5 6

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