Datasheet > JMSH1003ATL

JMSH1003ATL

更新时间： 2023-12-06 20:06:23

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
6页	380K
描述
中压 N-ch (40V ~ 400V)

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JMSH1003ATL 数据手册

JMSH1003ATL

100V 2.7m TOLL N-Ch Power MOSFET

Product Summary

Features

•

Ultra-low ON-resistance, R_DS(ON)

Parameter

V_DS

Value

Unit

100

2.8

228

2.7

Low Gate Charge, Q_g

100% UIS and R_gTested

Pb-free Lead Plating

V_{GS(th)_Typ}

I_D(@ V_GS= 10V) ⁽²⁾

R_{DS(ON)_Typ}(@ V_GS= 10V)

m

Halogen-free and RoHS-compliant

Applications

•

Power Management in Computing, CE, IE 4.0, Communications

Current Switching in DC/DC & AC/DC (SR) Sub-systems

Load Switching, Quick/Wireless Charging, Motor Driving

PowerJE^®10x12 Top

PowerJE^®10x12 Bottom

Drain

Tab

Gate

Pin 1

Source

Pins 2‐8

Pin 1

Ordering Information

Device

T_J(°C)

-55 to 175

Package

PowerJE^®10x12 ⁽¹⁾

# of Pins

Marking

MSL

Media

Quantity (pcs)

JMSH1003ATL-13

SH1003A

13-inch Reel

2000

Note 1: PowerJE^®is a registered trademark of JieJie Micro., its package outline is compatible to that of TO-LeadLess (TOLL).

Absolute Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Value

100

Symbol

V_DS

Unit

Drain-to-Source Voltage

Gate-to-Source Voltage

V_GS

±20

T_C= 25°C

228

Continuous Drain

Current ⁽²⁾

I_D

T_C= 100°C

162

Pulsed Drain Current ⁽³⁾

Avalanche Current ⁽⁴⁾

Avalanche Energy ⁽⁴⁾

I_DM

I_AS

914

E_AS

512

T_C= 25°C

375

Power Dissipation ⁽⁵⁾

P_D

T_C= 100°C

Junction & Storage Temperature Range

188

T_J, T_STG

-55 to 175

°C

R_DS(ON)vs. V_GS

Gate Charge

20.0

16.0

12.0

8.0

V_DS= 50V

I_D= 20A

4.0

0.0

V_GS(V)

Q_g(nC)

JieJie Microelectronics Co., Ltd.

All product information are copyrighted and subject to legal disclaimers

Rev. 1.0

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