JIEJIE MICROELECTRONICS CO. , Ltd.
JCT812F
12A SCR
Rev.A.1.0
DESCRIPTION:
With high ability to withstand the shock loading of large
current, JCT812F of silicon controlled rectifiers provides
high dV/dt rate with strong resistance to electromagnetic
interference. It is especially recommended for use on solid
state relay, motorcycle, power charger, T-tools etc. From
all three terminals to external heatsink,JCT812F provides
a rated insulation voltage of 2000 VRMS, complying with UL
standards (File ref: E252906). Package TO-220F is RoHS
compliant.
MAIN FEATURES
Symbol
IT(RMS)
Value
12
Unit
A
VDRM/VRRM
IGT
800
≤15
V
mA
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Tstg
Value
-40-150
-40-125
800
Unit
℃
℃
V
Storage junction temperature range
Operating junction temperature range
Tj
Repetitive peak off-state voltage (Tj=25℃)
Repetitive peak reverse voltage (Tj=25℃)
Average on-state current (TC≤86℃)
RMS on-state current (TC≤86℃)
VDRM
VRRM
IT(AV)
IT(RMS)
800
V
7.6
A
12
A
Non repetitive surge peak on-state current
(tp=10ms, Tj=25℃)
Non repetitive surge peak on-state current
(tp=8.3ms, Tj=25℃)
140
ITSM
A
154
98
I2t value for fusing (tp=10ms , Tj=25℃)
I2t
A2s
Critical rate of rise of on-state current
(IG=2×IGT, f=100Hz , Tj=125℃)
dI/dt
150
A/μs
TEL:+86-513-68528666
http://www.jjwdz.com
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