Datasheet > JCT812TA

JCT812TA

更新时间： 2025-08-03 14:54:11

品牌	Logo	应用领域
捷捷微 - JJM		可控硅
页数	文件大小	规格书
8页	1040K
描述
标准型单向可控硅

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JCT812TA 数据手册

JIEJIE MICROELECTRONICS CO. , Ltd.

JCT812TA 12A SCR

Rev.A.1.0

DESCRIPTION:

JCT812TA silicon controlled rectifier is specifically designed

for medium power switching and phase control applications.

High current density due to mesa technology; SIPOS and

Glass Passivation technology used has reliable operation

up to 125℃ junction temperature. Low I_GTparts available.

From all three terminals to external heatsink, JCT812TA

provides a rated insulation voltage of 2500 V_RMS,

complying with UL standards (File ref: E252906).

Package TO-220A is RoHS compliant.

MAIN FEATURES

Symbol

I_T(RMS)

Value

Unit

V_DRM/V_RRM

I_GT

800

≤5

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

T_stg

Value

-40-150

-40-125

800

Unit

℃

Storage junction temperature range

Operating junction temperature range

T_j

Repetitive peak off-state voltage (T_j=25℃)

Repetitive peak reverse voltage (T_j=25℃)

Average on-state current (T_C≤89℃)

RMS on-state current (T_C≤89℃)

V_DRM

V_RRM

I_T(AV)

I_T(RMS)

800

7.6

Non repetitive surge peak on-state current

(t_p=10ms, T_j=25℃)

Non repetitive surge peak on-state current

(t_p=8.3ms, T_j=25℃)

140

I_TSM

154

I²t value for fusing (t_p=10ms , T_j=25℃)

I²t

A²s

Critical rate of rise of on-state current

(I_G=2×I_GT, f=100Hz , T_j=125℃)

dI/dt

100

A/μs

TEL：+86-513-68528666

http://www.jjwdz.com

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