Datasheet > JCT812H

JCT812H

更新时间： 2023-12-06 20:11:51

品牌	Logo	应用领域
捷捷微 - JJM		可控硅
页数	文件大小	规格书
8页	988K
描述
标准型单向可控硅

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JCT812H 数据手册

JIEJIE MICROELECTRONICS CO. , Ltd.

JCT812H

12A SCR

Rev.A.1.0

DESCRIPTION:

With high ability to withstand the shock loading of

large current, JCT812H of silicon controlled rectifiers

provides high dV/dt rate with strong resistance to

electromagnetic interference.It is especially

recommended for use on solid state relay,

motorcycle, power charger, T-tools etc.

Package TO-251 is RoHS compliant.

MAIN FEATURES

Symbol

I_T(RMS)

Value

Unit

V_DRM/V_RRM

I_GT

800

≤15

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

T_stg

Value

-40-150

-40-125

800

Unit

℃

Storage junction temperature range

Operating junction temperature range

Repetitive peak off-state voltage (T_j=25℃)

Repetitive peak reverse voltage (T_j=25℃)

Average on-state current (T_C≤63℃)

RMS on-state current (T_C≤63℃)

T_j

V_DRM

V_RRM

I_T(AV)

I_T(RMS)

800

7.6

Non repetitive surge peak on-state current

(t_p=10ms, T_j=25℃)

Non repetitive surge peak on-state current

(t_p=8.3ms, T_j=25℃)

140

I_TSM

154

I²t value for fusing (t_p=10ms , T_j=25℃)

I²t

A²s

A/μs

Critical rate of rise of on-state current

(I_G=2×I_GT, f=100Hz , T_j=125℃)

dI/dt

I_GM

150

Peak gate current (t_p=20μs , T_j=125℃)

TEL：+86-513-68528666

http://www.jjwdz.com

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