Datasheet > JANTXV1N5660

JANTXV1N5660

更新时间： 2024-11-05 23:10:39

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
4页	198K
描述
1500 WATT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR

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JANTXV1N5660 数据手册

1N5629 thru 1N5665A

1500 WATT UNIDIRECTIONAL

TRANSIENT VOLTAGE SUPPRESSOR

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This popular Transient Voltage Suppressor (TVS) series for 1N5629 thru

1N5665A are JEDEC registered selections for unidirectional devices. All

have the same high Peak Pulse Power rating of 1500 W with extremely fast

response times. They are also available in military qualified selections as

described in the Features section herein. They are most often used for

protecting against transients from inductive switching environments,

induced RF effects, or induced secondary lightning effects as found in

lower surge levels of IEC61000-4-5. They are also very successful in

protecting airborne avionics and electrical systems. Since their response

time is virtually instantaneous, they can also protect from ESD and EFT per

IEC61000-4-2 and IEC61000-4-4.

DO-13

(DO-202AA)

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Unidirectional TVS series for thru-hole mounting

• Protection from switching transients and induced RF

• ESD & EFT protection per IEC 61000-4-2 and -4-4

Suppresses transients up to 1500 watts @ 10/1000 µs

(see Figure 1)

• Secondary lightning protection per IEC61000-4-5 with

•

Clamps transient in less than 100 pico seconds

Working voltage (V_WM) range 5 V to 171 V

Hermetic sealed DO-13 metal package

JAN/TX/TXV military qualifications also available for

the tighter tolerance “A” suffix devices per MIL-PRF-

19500/500 by adding the JAN, JANTX, or JANTXV

prefix, e.g. JANTXV1N5629A, etc.

For bidirectional TVS in the same DO-13 package,

see separate data sheet for the 1N6036 – 1N6072A

series (also military qualified)

Surface mount equivalent packages also available as

SMCJ5.0 - SMCJ170CA or SMCG5.0 – SMCG170CA

in separate data sheet (consult factory for other

surface mount options)

42 Ohms source impedance:

Class 1: 1N5629 to 1N5665A

Class 2: 1N5629 to 1N5663A

Class 3: 1N5629 to 1N5655A

Class 4: 1N5629 to 1N5648A

• Secondary lightning protection per IEC61000-4-5 with

12 Ohms source impedance:

•

Class 1 : 1N5629 to 1N5658A

Class 2: 1N5629 to 1N5651A

Class 3: 1N5629 to 1N5643A

Class 4: 1N5629 to 1N5636A

• Secondary lightning protection per IEC61000-4-5 with

2 Ohms source impedance:

Class 2: 1N5629 to 1N5642A

•

Plastic axial-leaded equivalents available in the

Class 3: 1N5629 to 1N5635A

1N6267 – 1N6303A series in separate data sheet

• Inherently radiation hard per Microsemi MicroNote 050

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

• 1500 Watts for 10/1000 µs with repetition rate of 0.01% or

•

CASE: DO-13 (DO-202AA), welded, hermetically

less* at lead temperature (T_L) 25^oC (See Figs. 1, 2, & 4)

sealed metal and glass

• Operating & Storage Temperatures: -65^oto +175^oC

FINISH: All external metal surfaces are Tin-Lead

plated and solderable per MIL-STD-750 method

2026

• THERMAL RESISTANCE: 50^oC/W junction to lead at

0.375 inches (10 mm) from body or 110 ^oC/W junction to

ambient when mounted on FR4 PC board with 4 mm²

copper pads (1 oz) and track width 1 mm, length 25 mm

•

POLARITY: Cathode connected to case and polarity

indicated by diode symbol

• DC Power Dissipation*: 1 Watt at T_L< +125^oC 3/8” (10

•

MARKING: Part number and polarity diode symbol

WEIGHT: 1.4 grams. (Approx)

mm) from body (see derating in Fig 3 and note below)

• Forward surge current: 200 Amps for 8.3ms half-sine

TAPE & REEL option: Standard per EIA-296 (add

wave at T_A= +25^oC

“TR” suffix to part number)

• Solder Temperatures: 260 ^oC for 10 s (maximum)

•

See package dimension on last page

* TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff voltage

(V_WM) except for transients that briefly drive the device into avalanche breakdown (V_BRto V_Cregion).

Microsemi

Page 1

11-06-2003 REV A

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

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与JANTXV1N5660相关器件

型号	品牌	获取价格	描述	数据表
JANTXV1N5660A	MICROSEMI	获取价格	1500 WATT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
JANTXV1N5660A	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 111V V(RWM), Unidirectional, 1 Element, Silicon, HE
JANTXV1N5660A	SENSITRON	获取价格	1500 W Transient Voltage Suppressor
JANTXV1N5660ATR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 111V V(RWM), Unidirectional, 1 Element, Silicon, DO
JANTXV1N5661	MICROSEMI	获取价格	1500 WATT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
JANTXV1N5661A	MICROSEMI	获取价格	1500 WATT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
JANTXV1N5661A	SENSITRON	获取价格	1500 W Transient Voltage Suppressor
JANTXV1N5662	MICROSEMI	获取价格	1500 WATT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
JANTXV1N5662A	MICROSEMI	获取价格	1500 WATT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
JANTXV1N5662A	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 136V V(RWM), Unidirectional, 1 Element, Silicon, HE

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