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JANTX2N5011

更新时间: 2024-09-29 14:30:07
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
4页 54K
描述
Small Signal Bipolar Transistor, 0.2A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN

JANTX2N5011 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-5包装说明:CYLINDRICAL, O-MBCY-W3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.39最大集电极电流 (IC):0.2 A
集电极-发射极最大电压:600 V配置:SINGLE
最小直流电流增益 (hFE):30JEDEC-95代码:TO-5
JESD-30 代码:O-MBCY-W3元件数量:1
端子数量:3最高工作温度:200 °C
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:NPN
认证状态:Qualified参考标准:MIL-19500/727
表面贴装:NO端子形式:WIRE
端子位置:BOTTOM晶体管元件材料:SILICON
Base Number Matches:1

JANTX2N5011 数据手册

 浏览型号JANTX2N5011的Datasheet PDF文件第2页浏览型号JANTX2N5011的Datasheet PDF文件第3页浏览型号JANTX2N5011的Datasheet PDF文件第4页 
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
NPN SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/727  
DEVICES  
LEVELS  
2N5010  
2N5011  
2N5012  
2N5013  
2N5014  
2N5015  
2N5010S  
2N5011S  
2N5012S  
2N5013S  
2N5014S  
2N5015S  
JAN  
JANTX  
JANTXV  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
Parameters / Test Conditions  
Symbol  
Value  
500  
600  
700  
800  
900  
1000  
500  
600  
700  
800  
900  
1000  
5
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Vdc  
Vdc  
Vdc  
Vdc  
Vdc  
Vdc  
Vdc  
Vdc  
Vdc  
mAdc  
mAdc  
Collector-Emitter Voltage  
2N5010  
2N5011  
2N5012  
2N5013  
2N5014  
2N5015  
2N5010  
2N5011  
2N5012  
2N5013  
2N5014  
2N5015  
VCER  
TO-5  
2N5010 thru 2N5015  
Collector-Base Voltage  
VCBO  
Emitter-Base Voltage  
Collector Current  
Base Current  
VEBO  
IC  
200  
20  
IB  
Total Power Dissipation  
TO-39  
2N5010S thru 2N5015S  
@ TA = +25°C  
@ TC = +25° C  
Pt  
1.0  
7.0  
W
Thermal Resistance, Junction to Case 1/  
20  
°C/W  
°C  
RθJC  
Operating & Storage Junction Temperature Range  
Tj, Tstg  
-65 to +200  
Note:  
1/ See 19500/727 for Thermal Derating Curves.  
T4-LDS-0067 Rev. 2 (100293)  
Page 1 of 4  

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