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JANTX2N5153U3

更新时间: 2024-09-25 12:09:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管
页数 文件大小 规格书
4页 178K
描述
PNP POWER SILICON TRANSISTOR

JANTX2N5153U3 技术参数

生命周期:ActiveReach Compliance Code:compliant
风险等级:5.03Is Samacsys:N
最大集电极电流 (IC):5 A配置:Single
最小直流电流增益 (hFE):70极性/信道类型:PNP
最大功率耗散 (Abs):10 W子类别:Other Transistors
表面贴装:YESBase Number Matches:1

JANTX2N5153U3 数据手册

 浏览型号JANTX2N5153U3的Datasheet PDF文件第2页浏览型号JANTX2N5153U3的Datasheet PDF文件第3页浏览型号JANTX2N5153U3的Datasheet PDF文件第4页 
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
PNP POWER SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/545  
DEVICES  
LEVELS  
JAN  
2N5151  
2N5153  
JANTX  
JANTXV  
JANS  
2N5151L  
2N5151U3  
2N5153L  
2N5153U3  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
Parameters / Test Conditions  
Symbol  
Value  
Unit  
Collector-Emitter Voltage  
VCEO  
VCBO  
VEBO  
IC  
80  
100  
5.5  
2.0  
Vdc  
Vdc  
Vdc  
Adc  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
Total Power Dissipation  
2N5151, 2N5153, L  
2N5151, 2N5153, L  
2N5151U3, 2N5153U3  
2N5151U3, 2N5153U3  
@ TA = +25°C (1)  
@ TC = +25°C (2)  
@ TA = +25°C (3)  
@ TC = +25°C (4)  
1.0  
10  
1.16  
100  
TO-5  
2N5151L, 2N5153L  
(See Figure 1)  
PT  
W
Operating & Storage Junction Temperature Range  
TJ , Tstg  
RθJC  
-65 to +200  
°C  
10  
1.75 (U3)  
Thermal Resistance, Junction-to Case  
°C/W  
Note:  
1) Derate linearly 5.7mW/°C for TA > +25°  
2) Derate linearly 66.7mW/°C for TA > +25°  
3) Derate linearly 6.63mW/°C for TA > +25°  
4) Derate linearly 571mW/°C for TA > +25°  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
TO-39 (TO-205AD)  
2N5151, 2N5153  
Parameters / Test Conditions  
OFF CHARACTERTICS  
Symbol  
V(BR)CEO  
IEBO  
Min.  
Max.  
Unit  
Collector-Emitter Breakdown Voltage  
IC = 100mAdc, IB = 0  
80  
Vdc  
Emitter-Base Cutoff Current  
VEB = 4.0Vdc, IC = 0  
1.0  
1.0  
µAdc  
mAdc  
VEB = 5.5Vdc, IC = 0  
Collector-Emitter Cutoff Current  
V
CE = 60Vdc, VBE = 0  
ICES  
1.0  
1.0  
µAdc  
mAdc  
U-3  
VCE = 100Vdc, VBE = 0  
2N5151U3, 2N5153U3  
Collector-Base Cutoff Current  
ICEO  
50  
µAdc  
VCE = 40Vdc, IB = 0  
T4-LDS-0132 Rev. 1 (091476)  
Page 1 of 4  

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