5秒后页面跳转
JANTX2N1488 PDF预览

JANTX2N1488

更新时间: 2024-10-01 20:58:59
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网晶体管
页数 文件大小 规格书
2页 26K
描述
Power Bipolar Transistor, 6A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, TO-33, 2 PIN

JANTX2N1488 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-3包装说明:FLANGE MOUNT, O-MBFM-P2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.82
最大集电极电流 (IC):6 A集电极-发射极最大电压:55 V
配置:SINGLE最小直流电流增益 (hFE):15
JEDEC-95代码:TO-204AAJESD-30 代码:O-MBFM-P2
JESD-609代码:e0元件数量:1
端子数量:2最高工作温度:200 °C
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
参考标准:MIL-19500/208表面贴装:NO
端子面层:TIN LEAD端子形式:PIN/PEG
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

JANTX2N1488 数据手册

 浏览型号JANTX2N1488的Datasheet PDF文件第2页 
Back to Bipolar Power Transistors  
TECHNICAL DATA  
2N1487 JAN, JTX, JTXV  
2N1488 JAN, JTX, JTXV  
2N1489 JAN, JTX, JTXV  
2N1490 JAN, JTX, JTXV  
MIL-PRF  
QPL  
DEVICES  
Processed per MIL-PRF-19500/208  
NPN HIGH-POWER SILICON TRANSISTOR  
MAXIMUM RATINGS  
Ratings  
Symbol 2N1487 2N1488 Units  
2N1498 2N1490  
Collector-Emitter Voltage  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
40  
60  
60  
55  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
W
VCEO  
VCBO  
VCEX  
VEBO  
IB  
100  
100  
10  
3.0  
6.0  
75  
Base Current  
Collector Current  
Total Power Dissipation @ TC = 250C (1)  
IC  
PT  
Operating & Storage Junction  
Temperature Range  
TJ, T  
stg  
-65 to +200  
0C  
TO-33 (TO-204AA)  
THERMAL CHARACTERISTICS  
Characteristics  
Thermal Resistance, Junction-to-Case  
Symbol  
Max.  
2.33  
Unit  
0C/W  
R
qJC  
1) Derate linearly 0.429 W/0C for TC > 250C  
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)  
Characteristics  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
IC = 100 mAdc  
Symbol  
Min.  
Max.  
Unit  
Vdc  
Vdc  
Vdc  
40  
55  
2N1487, 2N1489  
2N1488, 2N1490  
V(BR)  
CEO  
Collector-Emitter Breakdown Voltage  
60  
100  
IC = 200 mAdc  
2N1487, 2N1489  
2N1488, 2N1490  
V(BR)  
CBO  
Collector-Emitter Breakdown Voltage  
IC = 0.5 mAdc, VEB = 1.5 Vdc  
60  
100  
2N1487, 2N1489  
2N1488, 2N1490  
V(BR)  
CEX  
Collector-Base Cutoff Current  
VCB = 30 Vdc  
Emitter-Base Cutoff Current  
VEB = 10 Vdc  
25  
25  
mAdc  
mAdc  
ICBO  
IEBO  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
3/98 REV: B  
Page 1 of 2  

与JANTX2N1488相关器件

型号 品牌 获取价格 描述 数据表
JANTX2N1490 MICROSEMI

获取价格

Power Bipolar Transistor, 6A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal,
JANTX2N1613 RAYTHEON

获取价格

Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-39,
JANTX2N1613 MICROSEMI

获取价格

NPN LOW POWER SILICON TRANSISTOR
JANTX2N1613L MICROSEMI

获取价格

NPN LOW POWER SILICON TRANSISTOR
JANTX2N1711 MICROSEMI

获取价格

NPN LOW POWER SILICON TRANSISTOR
JANTX2N1711 RAYTHEON

获取价格

Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-39,
JANTX2N1711S ETC

获取价格

TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1A I(C) | TO-39
JANTX2N1714 MICROSEMI

获取价格

Power Bipolar Transistor, 0.75A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin,
JANTX2N1714S MICROSEMI

获取价格

Power Bipolar Transistor, 0.75A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin,
JANTX2N1715 MICROSEMI

获取价格

Power Bipolar Transistor, 0.75A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin