是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-3 | 包装说明: | FLANGE MOUNT, O-MBFM-P2 |
针数: | 2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.82 |
最大集电极电流 (IC): | 6 A | 集电极-发射极最大电压: | 55 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 15 |
JEDEC-95代码: | TO-204AA | JESD-30 代码: | O-MBFM-P2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 200 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
参考标准: | MIL-19500/208 | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | PIN/PEG |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANTX2N1490 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 6A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, | |
JANTX2N1613 | RAYTHEON |
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Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-39, | |
JANTX2N1613 | MICROSEMI |
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NPN LOW POWER SILICON TRANSISTOR | |
JANTX2N1613L | MICROSEMI |
获取价格 |
NPN LOW POWER SILICON TRANSISTOR | |
JANTX2N1711 | MICROSEMI |
获取价格 |
NPN LOW POWER SILICON TRANSISTOR | |
JANTX2N1711 | RAYTHEON |
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Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-39, | |
JANTX2N1711S | ETC |
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TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1A I(C) | TO-39 | |
JANTX2N1714 | MICROSEMI |
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Power Bipolar Transistor, 0.75A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, | |
JANTX2N1714S | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 0.75A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, | |
JANTX2N1715 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 0.75A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin |