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JANTX2N1716S PDF预览

JANTX2N1716S

更新时间: 2024-10-01 20:28:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体管
页数 文件大小 规格书
9页 661K
描述
Power Bipolar Transistor, 0.75A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin,

JANTX2N1716S 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:CYLINDRICAL, O-MBCY-W3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.2
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):0.75 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):40
JESD-30 代码:O-MBCY-W3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:175 °C封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:NPN最大功率耗散 (Abs):0.8 W
认证状态:Qualified参考标准:MIL-19500/263A
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:WIRE
端子位置:BOTTOM晶体管元件材料:SILICON
标称过渡频率 (fT):16 MHzBase Number Matches:1

JANTX2N1716S 数据手册

 浏览型号JANTX2N1716S的Datasheet PDF文件第2页浏览型号JANTX2N1716S的Datasheet PDF文件第3页浏览型号JANTX2N1716S的Datasheet PDF文件第4页浏览型号JANTX2N1716S的Datasheet PDF文件第5页浏览型号JANTX2N1716S的Datasheet PDF文件第6页浏览型号JANTX2N1716S的Datasheet PDF文件第7页 

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型号 品牌 获取价格 描述 数据表
JANTX2N1717 MICROSEMI

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Power Bipolar Transistor, 0.75A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin
JANTX2N1717S MICROSEMI

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Power Bipolar Transistor, 0.75A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin
JANTX2N1722 MICROSEMI

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JANTX2N1772A POWEREX

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Silicon Controlled Rectifier, 4700mA I(T), 100V V(DRM)
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JANTX2N1792 INFINEON

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Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 50V V(DRM), 50V V(RRM), 1 Elemen
JANTX2N1793 INFINEON

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Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 100V V(DRM), 100V V(RRM), 1 Elem
JANTX2N1796 INFINEON

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Silicon Controlled Rectifier, 110A I(T)RMS, 250V V(DRM), 250V V(RRM), 1 Element, TO-208AD,
JANTX2N1800 INFINEON

获取价格

Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 600V V(DRM), 720V V(RRM), 1 Elem