Datasheet > JANTX2N1724

JANTX2N1724

更新时间： 2024-10-01 04:58:59

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管高功率电源
页数	文件大小	规格书
2页	55K
描述
NPN SILICON HIGH POWER TRANSISTOR

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中文翻译

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数据手册

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JANTX2N1724 数据手册

TECHNICAL DATA

NPN SILICON HIGH POWER TRANSISTOR

Qualified per MIL-PRF-19500/ 262

Devices

Qualified Level

JAN

JANTX

2N1722

2N1724

MAXIMUM RATINGS

Ratings

Symbol

V_CEO

V_CBO

V_EBO

I_C

Value

Units

Vdc

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

175

Vdc

TO-61*

Adc

5.0

2N1724

Total Power Dissipation

@ T_A= +25⁰C⁽¹⁾

3.0

P_T

@ T_C= +100⁰C ⁽²⁾

⁰C

T_OP

Temperature Range:

Operating

Storage Junction

175

-65 to +200

stg

1) Derate linearly 20 mW/⁰C for T_Abetween +25⁰C and +175⁰C

TO-53*

2N1722

2) Derate linearly 666 mW/⁰C for T_Cbetween +100⁰C and +175⁰C

*See Appendix A for

Package Outline

ELECTRICAL CHARACTERISTICS

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

I_C= 200 mAdc

Emitter-Base Breakdown Voltage

I_E= 10 mAdc

Vdc

V_(BR)

CEO

V_(BR)

EBO

Collector-Emitter Cutoff Current

V_CE= 60 Vdc

Collector-Base Cutoff Current

V_CB= 175 Vdc

Emitter-Base Cutoff Current

V_EB= 7.0 Vdc

300

5.0

I_CES

I_CBO

I_EBO

mAdc

400

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

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