Datasheet > JANTX1N6623

JANTX1N6623

更新时间： 2024-12-01 20:03:43

品牌	Logo	应用领域
美高森美 - MICROSEMI		快速恢复能力电源超快恢复二极管快速恢复二极管超快速恢复能力电源
页数	文件大小	规格书
4页	313K
描述
Rectifier Diode, Avalanche, 1 Element, 1A, 800V V(RRM), Silicon, DO-41, HERMETIC SEALED, GLASS PACKAGE-2

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

JANTX1N6623 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Active	包装说明：	O-LALF-W2
针数：	2	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.80
风险等级：	5.33	其他特性：	HIGH RELIABILITY
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	RECTIFIER DIODE
JESD-30 代码：	O-LALF-W2	JESD-609代码：	e0
元件数量：	1	端子数量：	2
最高工作温度：	150 °C	最低工作温度：	-65 °C
最大输出电流：	1 A	封装主体材料：	GLASS
封装形状：	ROUND	封装形式：	LONG FORM
峰值回流温度（摄氏度）：	NOT SPECIFIED	认证状态：	Qualified
参考标准：	MIL-19500	最大重复峰值反向电压：	800 V
最大反向恢复时间：	0.06 µs	表面贴装：	NO
技术：	AVALANCHE	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	WIRE	端子位置：	AXIAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

JANTX1N6623 数据手册

1N6620 thru 1N6625

VOIDLESS-HERMETICALLY SEALED

ULTRA FAST RECOVERY GLASS

RECTIFIERS

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-

19500/585 and is ideal for high-reliability applications where a failure cannot be

tolerated. These industry-recognized 1.5 to 2.0 Amp rated rectifiers for working

peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-

glass construction using an internal “Category I” metallurgical bond. These devices

are also available in surface mount MELF package configurations by adding a “US”

suffix (see separate data sheet for 1N6620US thru 1N6625US). Microsemi also

offers numerous other rectifier products to meet higher and lower current ratings

with various recovery time speed requirements including standard, fast and ultrafast

device types in both through-hole and surface mount packages.

Package “A”

Axial

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Popular JEDEC registered 1N6620 to 1N6625 series

Voidless hermetically sealed glass package

Extremely robust construction

•

Ultrafast recovery rectifier series 200 to 1000 V

Military and other high-reliability applications

Switching power supplies or other applications

requiring extremely fast switching & low forward

loss

High forward surge current capability

Low thermal resistance

Triple-layer passivation

Internal “Category I” Metallurgical bonds

•

JAN, JANTX, and JANTXV available per MIL-PRF-

19500/585

Controlled avalanche with peak reverse power

capability

•

Further options for screening in accordance with

MIL-PRF-19500 for JANS by using a “SP” prefix, e.g.

SP6620, SP6624, etc.

•

Inherently radiation hard as described in Microsemi

MicroNote 050

Surface mount equivalents also available in a square

end-cap MELF configuration with “US” suffix (see

separate data sheet for 1N6620US thru 1N6625US)

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Junction Temperature: -65^oC to +150^oC

Storage Temperature: -65^oC to +175^oC

•

CASE: Hermetically sealed voidless hard glass

with Tungsten slugs

Peak Forward Surge Current @ 25^oC: 20 Amps

(except 1N6625 which is 15 Amps)

TERMINATIONS: Axial-leads are Copper with

Tin/Lead (Sn/Pb) finish

•

MARKING: Body painted and part number, etc.

POLARITY: Cathode indicated by band

Tape & Reel option: Standard per EIA-296

Weight: 340 mg

Note: Test pulse = 8.3 ms, half-sine wave.

•

Average Rectified Forward Current (I_O) at T_L= +55^oC

(L=.375 inch from body):

1N6620 thru 1N6622: 2.0 Amps

1N6623 thru 1N6625: 1.5 Amps

(Derate linearly at 0.833%/^oC for T_L> +55^oC)

Average Rectified Forward Current (I_O) at T_A=25^oC:

1N6620 thru 1N6622: 1.2 Amps

See package dimensions on last page

•

1N6623 thru 1N6625: 1.0 Amp

(Derate linearly at 0.67%/ ^oC for T_A>+25^oC. This I_O

rating is typical for PC boards where thermal

resistance from mounting point to ambient is

sufficiently controlled where T_J(max)is not exceeded.)

•

Thermal Resistance L= 0.375 inch (R_θ_JL): 38^oC/W

Capacitance at V_R= 10 V: 10 pF

Solder temperature: 260^oC for 10 s (maximum)

10-06-2009 REV C; SA7-55.pdf

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

中文翻译

下载PDF

与JANTX1N6623相关器件

型号	品牌	获取价格	描述	数据表
JANTX1N6623U	SENSITRON	获取价格	DESCRIPTION: 800 VOLT, AMP, 50 NS HERMETIC RECTIFIER IN A MELF-A PACKAGE.
JANTX1N6623US	MICROSEMI	获取价格	Rectifier Diode, Avalanche, 1 Element, 1A, 800V V(RRM), Silicon, HERMETIC SEALED, GLASS, D
JANTX1N6623US	SENSITRON	获取价格	DESCRIPTION: 800 VOLT, AMP, 50 NS HERMETIC RECTIFIER IN A MELF-A PACKAGE.
JANTX1N6624	SENSITRON	获取价格	DESCRIPTION: 900 VOLT, AMP, 50 NS HERMETIC RECTIFIER IN A 106 PACKAGE.
JANTX1N6624U	SENSITRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 900V V(RRM), Silicon, MELF-2
JANTX1N6624US	MICROSEMI	获取价格	Rectifier Diode, Avalanche, 1 Element, 1A, 900V V(RRM), Silicon, HERMETIC SEALED, GLASS, D
JANTX1N6624US	SENSITRON	获取价格	DESCRIPTION: 900 VOLT, AMP, 50 NS HERMETIC RECTIFIER IN A MELF-A PACKAGE.
JANTX1N6625	MICROSEMI	获取价格	Rectifier Diode, Avalanche, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41, HERMETIC SEALED,
JANTX1N6625	SENSITRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon, DO-41, HERMETIC SEALED,
JANTX1N6625U	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon, HERMETIC SEALED, MELF-A,

与JANTX1N6623相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

53
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

42
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

70
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

66

产品中心

服务支持

精选活动

关于我们

帮助中心

JANTX1N6623

JANTX1N6623 技术参数

JANTX1N6623 数据手册

与JANTX1N6623相关器件

与JANTX1N6623相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

JANTX1N6623

JANTX1N6623 技术参数

JANTX1N6623 数据手册

与JANTX1N6623相关器件

与JANTX1N6623相关文章

您还可以找

您在本页遇到什么问题？