Datasheet > JANTX1N6623US

JANTX1N6623US

更新时间： 2024-12-02 06:03:39

品牌	Logo	应用领域
美高森美 - MICROSEMI		快速恢复能力电源超快恢复二极管快速恢复二极管超快速恢复能力电源
页数	文件大小	规格书
4页	337K
描述
Rectifier Diode, Avalanche, 1 Element, 1A, 800V V(RRM), Silicon, HERMETIC SEALED, GLASS, D-5A, 2 PIN

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JANTX1N6623US 技术参数

是否Rohs认证：	不符合	生命周期：	Active
包装说明：	O-LELF-R2	针数：	2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.76
其他特性：	HIGH RELIABILITY	外壳连接：	ISOLATED
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE	JESD-30 代码：	O-LELF-R2
JESD-609代码：	e0	元件数量：	1
端子数量：	2	最高工作温度：	150 °C
最低工作温度：	-65 °C	最大输出电流：	1 A
封装主体材料：	GLASS	封装形状：	ROUND
封装形式：	LONG FORM	峰值回流温度（摄氏度）：	NOT SPECIFIED
认证状态：	Qualified	参考标准：	MIL-19500
最大重复峰值反向电压：	800 V	最大反向恢复时间：	0.06 µs
表面贴装：	YES	技术：	AVALANCHE
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	WRAP AROUND
端子位置：	END	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

JANTX1N6623US 数据手册

1N6620US thru 1N6625US

VOIDLESS-HERMETICALLYSEALED

SURFACE MOUNT ULTRA FAST

RECOVERY GLASS RECTIFIERS

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-

19500/585 and is ideal for high-reliability applications where a failure cannot be

tolerated. These industry-recognized 1.5 to 2.0 Amp rated rectifiers for working

peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-

glass construction using an internal “Category I” metallurgical bond. These devices

are also available in axial-leaded packages for thru-hole mounting (see separate

data sheet for 1N6620 thru 1N6625). Microsemi also offers numerous other rectifier

products to meet higher and lower current ratings with various recovery time speed

requirements including standard, fast and ultrafast device types in both through-hole

and surface mount packages.

Package “A”

or D-5A

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Surface mount series equivalent to the JEDEC

registered 1N6620 to 1N6625 series

•

Ultrafast recovery rectifier series 200 to 1000 V

Military and other high-reliability applications

Switching power supplies or other applications

requiring extremely fast switching & low forward

loss

High forward surge current capability

Low thermal resistance

•

Voidless hermetically sealed glass package

Extremely robust construction

Triple-layer passivation

•

Internal “Category I” Metallurgical bonds

JAN, JANTX, and JANTXV available per MIL-PRF-

19500/585

Controlled avalanche with peak reverse power

capability

•

Further options for screening in accordance with MIL-

PRF-19500 for JANS by using a “SP” prefix, e.g.

SP6620US, SP6624US, etc.

•

Inherently radiation hard as described in Microsemi

MicroNote 050

Axial-leaded equivalents also available (see separate

data sheet for 1N6620 thru 1N6625)

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

• Junction Temperature: -65^oC to +150^oC

• Storage Temperature: -65^oC to +175^oC

•

CASE: Hermetically sealed voidless hard glass

with Tungsten slugs

• Peak Forward Surge Current @ 25^oC: 20 Amps (except

TERMINATIONS: End caps are Copper with

Tin/Lead (Sn/Pb) finish. Note: Previous inventory

had solid Silver end caps with Tin/Lead plating.

1N6625 which is 15 Amps)

Note: Test pulse = 8.3 ms, half-sine wave.

• Average Rectified Forward Current (I_O) at T_EC=+110^oC:

1N6620 thru 1N6622: 2.0 Amps

•

MARKING: Cathode band only

POLARITY: Cathode indicated by band

Tape & Reel option: Standard per EIA-481-B

Weight: 193 mg

1N6623 thru 1N6625: 1.5 Amps

(Derate linearly at 1.5%/^oC for T_EC> +110^oC)

• Average Rectified Forward Current (I_O) at T_A=25^oC:

1N6620 thru 1N6622: 1.2 Amps

See package dimensions and recommended pad

layout on last page

1N6623 thru 1N6625: 1.0 Amp

(Derate linearly at 0.67%/ ^oC for T_A>+25^oC. This I_O

rating is typical for PC boards where thermal resistance

from mounting point to ambient is sufficiently controlled

where T_J(max)is not exceeded.)

• Thermal Resistance junction to endcap (R_θJEC): 13^oC/W

• Capacitance at V_R= 10 V: 10 pF

• Solder temperature: 260^oC for 10 s (maximum)

10-06-2009 REV E; SD52A.pdf

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

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与JANTX1N6623US相关器件

型号	品牌	获取价格	描述	数据表
JANTX1N6624	SENSITRON	获取价格	DESCRIPTION: 900 VOLT, AMP, 50 NS HERMETIC RECTIFIER IN A 106 PACKAGE.
JANTX1N6624U	SENSITRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 900V V(RRM), Silicon, MELF-2
JANTX1N6624US	MICROSEMI	获取价格	Rectifier Diode, Avalanche, 1 Element, 1A, 900V V(RRM), Silicon, HERMETIC SEALED, GLASS, D
JANTX1N6624US	SENSITRON	获取价格	DESCRIPTION: 900 VOLT, AMP, 50 NS HERMETIC RECTIFIER IN A MELF-A PACKAGE.
JANTX1N6625	MICROSEMI	获取价格	Rectifier Diode, Avalanche, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41, HERMETIC SEALED,
JANTX1N6625	SENSITRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon, DO-41, HERMETIC SEALED,
JANTX1N6625U	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon, HERMETIC SEALED, MELF-A,
JANTX1N6625U	SENSITRON	获取价格	DESCRIPTION: 1000 VOLT, AMP, 60 NS HERMETIC RECTIFIER IN A MELF-A PACKAGE.
JANTX1N6625US	SENSITRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon, HERMETIC SEALED, MELF-A,
JANTX1N6626	SENSITRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, HERMETIC, 306, 2 PIN

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