Datasheet > JANTX1N6621

JANTX1N6621

更新时间： 2024-10-03 20:03:43

品牌	Logo	应用领域
美高森美 - MICROSEMI		超快恢复二极管快速恢复二极管
页数	文件大小	规格书
4页	313K
描述
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.2A, 400V V(RRM), Silicon, DO-41, HERMETIC SEALED, GLASS, A, 2 PIN

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JANTX1N6621 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Active	包装说明：	O-LALF-W2
针数：	2	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.80
风险等级：	1.96	其他特性：	HIGH RELIABILITY
应用：	ULTRA FAST RECOVERY	外壳连接：	ISOLATED
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE	最大正向电压 (VF)：	1.6 V
JESD-30 代码：	O-LALF-W2	JESD-609代码：	e0
最大非重复峰值正向电流：	20 A	元件数量：	1
相数：	1	端子数量：	2
最高工作温度：	150 °C	最低工作温度：	-65 °C
最大输出电流：	1.2 A	封装主体材料：	GLASS
封装形状：	ROUND	封装形式：	LONG FORM
峰值回流温度（摄氏度）：	NOT SPECIFIED	认证状态：	Qualified
参考标准：	MIL-19500	最大重复峰值反向电压：	400 V
最大反向电流：	0.5 µA	最大反向恢复时间：	0.045 µs
表面贴装：	NO	技术：	AVALANCHE
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	WIRE
端子位置：	AXIAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

JANTX1N6621 数据手册

1N6620 thru 1N6625

VOIDLESS-HERMETICALLY SEALED

ULTRA FAST RECOVERY GLASS

RECTIFIERS

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-

19500/585 and is ideal for high-reliability applications where a failure cannot be

tolerated. These industry-recognized 1.5 to 2.0 Amp rated rectifiers for working

peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-

glass construction using an internal “Category I” metallurgical bond. These devices

are also available in surface mount MELF package configurations by adding a “US”

suffix (see separate data sheet for 1N6620US thru 1N6625US). Microsemi also

offers numerous other rectifier products to meet higher and lower current ratings

with various recovery time speed requirements including standard, fast and ultrafast

device types in both through-hole and surface mount packages.

Package “A”

Axial

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Popular JEDEC registered 1N6620 to 1N6625 series

Voidless hermetically sealed glass package

Extremely robust construction

•

Ultrafast recovery rectifier series 200 to 1000 V

Military and other high-reliability applications

Switching power supplies or other applications

requiring extremely fast switching & low forward

loss

High forward surge current capability

Low thermal resistance

Triple-layer passivation

Internal “Category I” Metallurgical bonds

•

JAN, JANTX, and JANTXV available per MIL-PRF-

19500/585

Controlled avalanche with peak reverse power

capability

•

Further options for screening in accordance with

MIL-PRF-19500 for JANS by using a “SP” prefix, e.g.

SP6620, SP6624, etc.

•

Inherently radiation hard as described in Microsemi

MicroNote 050

Surface mount equivalents also available in a square

end-cap MELF configuration with “US” suffix (see

separate data sheet for 1N6620US thru 1N6625US)

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Junction Temperature: -65^oC to +150^oC

Storage Temperature: -65^oC to +175^oC

•

CASE: Hermetically sealed voidless hard glass

with Tungsten slugs

Peak Forward Surge Current @ 25^oC: 20 Amps

(except 1N6625 which is 15 Amps)

TERMINATIONS: Axial-leads are Copper with

Tin/Lead (Sn/Pb) finish

•

MARKING: Body painted and part number, etc.

POLARITY: Cathode indicated by band

Tape & Reel option: Standard per EIA-296

Weight: 340 mg

Note: Test pulse = 8.3 ms, half-sine wave.

•

Average Rectified Forward Current (I_O) at T_L= +55^oC

(L=.375 inch from body):

1N6620 thru 1N6622: 2.0 Amps

1N6623 thru 1N6625: 1.5 Amps

(Derate linearly at 0.833%/^oC for T_L> +55^oC)

Average Rectified Forward Current (I_O) at T_A=25^oC:

1N6620 thru 1N6622: 1.2 Amps

See package dimensions on last page

•

1N6623 thru 1N6625: 1.0 Amp

(Derate linearly at 0.67%/ ^oC for T_A>+25^oC. This I_O

rating is typical for PC boards where thermal

resistance from mounting point to ambient is

sufficiently controlled where T_J(max)is not exceeded.)

•

Thermal Resistance L= 0.375 inch (R_θ_JL): 38^oC/W

Capacitance at V_R= 10 V: 10 pF

Solder temperature: 260^oC for 10 s (maximum)

10-06-2009 REV C; SA7-55.pdf

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

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与JANTX1N6621相关器件

型号	品牌	获取价格	描述	数据表
JANTX1N6621U	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.2A, 400V V(RRM), Silicon, HERMETIC, MELF-A, 2 PIN
JANTX1N6621U	SENSITRON	获取价格	DESCRIPTION: 400 VOLT, AMP, 30 NS HERMETIC RECTIFIER IN A MELF-A PACKAGE.
JANTX1N6621US	MICROSEMI	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.2A, 400V V(RRM), Silicon, HERMETIC SEALE
JANTX1N6621US	SENSITRON	获取价格	DESCRIPTION: 400 VOLT, AMP, 30 NS HERMETIC RECTIFIER IN A MELF-A PACKAGE.
JANTX1N6622	MICROSEMI	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.2A, 600V V(RRM), Silicon, DO-41, HERMETI
JANTX1N6622	SENSITRON	获取价格	DESCRIPTION: 600 VOLT, AMP, 30 NS HERMETIC RECTIFIER IN A 106 PACKAGE.
JANTX1N6622U	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.2A, 600V V(RRM), Silicon, HERMETIC, MELF-A, 2 PIN
JANTX1N6622U	SENSITRON	获取价格	DESCRIPTION: 600 VOLT, AMP, 30 NS HERMETIC RECTIFIER IN A MELF-A PACKAGE.
JANTX1N6622US	MICROSEMI	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.2A, 600V V(RRM), Silicon, HERMETIC SEALE
JANTX1N6622US	SENSITRON	获取价格	DESCRIPTION: 600 VOLT, AMP, 30 NS HERMETIC RECTIFIER IN A MELF-A PACKAGE.

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