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JANTX1N6622US PDF预览

JANTX1N6622US

更新时间: 2024-10-04 17:33:11
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SENSITRON /
页数 文件大小 规格书
3页 53K
描述
DESCRIPTION: 600 VOLT, AMP, 30 NS HERMETIC RECTIFIER IN A MELF-A PACKAGE.

JANTX1N6622US 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.83Is Samacsys:N
应用:ULTRA FAST RECOVERY POWER外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.4 V
JESD-30 代码:O-LELF-R2最大非重复峰值正向电流:20 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最大输出电流:2 A封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Qualified
参考标准:MIL-19500/585E最大重复峰值反向电压:600 V
最大反向恢复时间:0.03 µs子类别:Rectifier Diodes
表面贴装:YES端子形式:WRAP AROUND
端子位置:END处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

JANTX1N6622US 数据手册

 浏览型号JANTX1N6622US的Datasheet PDF文件第2页浏览型号JANTX1N6622US的Datasheet PDF文件第3页 
1N6620,U,US thru 1N6625,U,US  
SENSITRON  
SEMICONDUCTOR  
TECHNICAL DATA  
DATA SHEET 5089, REV. A  
SJ  
SX  
SV  
Ultrafast Recovery Rectifier  
Hermetic, non-cavity glass package  
Metallurgically bonded  
Operating and Storage Temperature: -65oC to +175o  
MAX. RATINGS / ELECTRICAL CHARACTERISTICS All ratings are at TA = 25oC unless otherwise specified.  
Rating  
Symbol  
Condition  
Max  
Units  
WORKING PEAK REVERSE VOLTAGE  
1N6620, U, US  
200  
400  
600  
800  
900  
1000  
1N6621, U ,US  
1N6622, U, US  
1N6623, U, US  
1N6624 ,U, US  
VRWM  
Volts  
1N6625, U, US  
AVERAGE RECTIFIED FORWARD CURRENT  
1N6620, U, US thru 1N6622, U, US  
Io  
1.2  
1.0  
Amps  
A(pk)  
1N6623, U, US thru 1N6625, U, US  
PEAK FORWARD SURGE CURRENT  
1N6620, U, US thru 1N6624,U, US  
1N6625, U, US  
IFSM  
Tp=8.3ms  
20  
15  
MAXIMUM REVERSE CURRENT  
1N6620, U, US thru 1N6624,U, US  
1N6625, U, US  
MAXIMUM REVERSE CURRENT  
1N6620, U, US thru 1N6624,U, US  
1N6625, U, US  
IR @ VRWM  
IR @ VRWM  
Tj = 25 oC  
0.5  
1.0  
μAmps  
μAmps  
Tj = 150 oC  
150  
200  
MAX. PEAK FORWARD VOLTAGE (PULSED)  
1N6620, U, US thru 1N6622,U, US  
1N6623,U, US & 1N6624,U, US  
1N6625, U, US  
IF=2.0A  
IF=1.5μA  
IF=1.5μA  
1.60  
1.80  
1.95  
VFM  
Volts  
PEAK RECOVERY CURRENT  
1N6620, U, US thru 1N6622,U, US  
1N6623,U, US & 1N6624,U, US  
1N6625, U, US  
IF=2A,  
100A/μ  
3.5  
4.2  
5.0  
IRM  
A(pk)  
ns  
MAXIMUM REVERSE RECOVERY TIME  
1N6620, U, US thru 1N6622,U, US  
1N6623,U, US & 1N6624,U, US  
1N6625, U, US  
IF=0.5A  
RM =1.0A  
30  
50  
60  
Trr  
I
FORWARD RECOVERY VOLTAGE  
1N6620, U, US thru 1N6622,U, US  
1N6623,U, US & 1N6624,U, US  
1N6625, U, US  
IF=0.5A  
tr=12ns  
12  
18  
30  
VFRM  
Volts  
THERMAL RESISTANCE (Axial)  
1N6620 thru 1N6625  
L=.375  
L=0  
oC/W  
oC/W  
RθJL  
RθJC  
38  
20  
THERMAL RESISTANCE (MELF)  
1N6620U,US thru 1N6625U,US  
221 West Industry Court Deer Park, NY 11729-4681 Phone (631) 586 7600 Fax (631) 242 9798  
World Wide Web Site - http://www.sensitron.com E-Mail Addre1N - sales@sensitron.com •  

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DESCRIPTION: 800 VOLT, AMP, 50 NS HERMETIC RECTIFIER IN A 106 PACKAGE.
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DESCRIPTION: 800 VOLT, AMP, 50 NS HERMETIC RECTIFIER IN A MELF-A PACKAGE.
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DESCRIPTION: 900 VOLT, AMP, 50 NS HERMETIC RECTIFIER IN A 106 PACKAGE.
JANTX1N6624U SENSITRON

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JANTX1N6624US MICROSEMI

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Rectifier Diode, Avalanche, 1 Element, 1A, 900V V(RRM), Silicon, HERMETIC SEALED, GLASS, D
JANTX1N6624US SENSITRON

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DESCRIPTION: 900 VOLT, AMP, 50 NS HERMETIC RECTIFIER IN A MELF-A PACKAGE.
JANTX1N6625 MICROSEMI

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Rectifier Diode, Avalanche, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41, HERMETIC SEALED,