Datasheet > JANTX1N3156-1

JANTX1N3156-1

更新时间： 2024-11-29 14:51:43

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管
页数	文件大小	规格书
3页	114K
描述
Zener Diode, 8.4V V(Z), 5%, 0.5W, Silicon, DO-35, HERMETIC SEALED, GLASS, SIMILAR TO DO-7, 2 PIN

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JANTX1N3156-1 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Active	零件包装代码：	DO-7
包装说明：	O-LALF-W2	针数：	2
Reach Compliance Code：	not_compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.24
Is Samacsys：	N	其他特性：	METALLURGICALLY BONDED
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	ZENER DIODE
JEDEC-95代码：	DO-35	JESD-30 代码：	O-LALF-W2
JESD-609代码：	e0	元件数量：	1
端子数量：	2	最高工作温度：	175 °C
最低工作温度：	-65 °C	封装主体材料：	GLASS
封装形状：	ROUND	封装形式：	LONG FORM
峰值回流温度（摄氏度）：	NOT SPECIFIED	最大功率耗散：	0.5 W
认证状态：	Qualified	参考标准：	MIL-19500/158P
标称参考电压：	8.4 V	表面贴装：	NO
技术：	ZENER	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	WIRE	端子位置：	AXIAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	电压温度Coeff-Max：	0.168 mV/ °C
最大电压容差：	5%	Base Number Matches：	1

JANTX1N3156-1 数据手册

1N3154 thru 1N3157, A, -1, e3

8.4 Volt Temperature Compensated Zener

Reference Diodes

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

The popular 1N3154 thru 1N3157A series of Zero-TC Reference Diodes

provides a selection of 8.4 V nominal voltages and temperature coefficients to

as low as 0.001 %/^oC for minimal voltage change with temperature when

operated at 10.0 mA. These glass axial-leaded DO-7 reference diodes are

also available in JAN, JANTX, and JANTXV military qualifications. As a further

option for commercial product, they are available as RoHS Compliant with an

e3 suffix added to the part number. Microsemi also offers numerous other

Zener Reference Diode products for a variety of other voltages from 6.2 V to

200 V.

DO-7

(DO-204AA)

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

JEDEC registered 1N3154 thru 1N3157A series

•

Provides minimal voltage changes over a broad

temperature range

Standard reference voltage of 8.4V +/- 5% with tighter

tolerances available

For instrumentation and other circuit designs

requiring a stable voltage reference

•

1N3154, 3155, 3156, and 3157 also have military

qualification to MIL-PRF-19500/158 up to the

JANTXV level by adding JAN, JANTX, or JANTXV

prefixes to part numbers as well as “-1” suffix, e.g.

JANTX1N3157-1, etc.

Maximum temperature coefficient selections

available from 0.01%/ºC to 0.001%/ºC

Tight reference voltage tolerances at the 8.4 V

nominal is available by adding tolerance 1%, 2%,

3%, etc. after the part number for identification e.g.

1N3156-2%, 1N3157A-1%, 1N3157-1-1%, etc.

•

Internal metallurgical bonds

JANS Equivalent available via SCD

•

Flexible axial-lead mounting terminals

Radiation Hardened devices available by changing

1N prefix to RH, e.g. RH3156, RH3157, RH3157A,

etc. Also consult factory for “RH” data sheet

brochure

Nonsensitive to ESD per MIL-STD-750 Method 1020

•

RoHS Compliant devices available by adding an “e3”

suffix (not applicable to military)

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Operating & StorageTemperature: -65^oC to +175^oC

•

CASE: Hermetically sealed glass case with DO-7

(DO-204AA) package

DC Power Dissipation: 500 mW @ T_L= 25^oC and

maximum current I_ZMof 55 mA. NOTE: For optimum

voltage-temperature stability, I_Z= 10.0 mA (less than

90 mW in dissipated power)

•

TERMINALS: Tin-Lead (military) or RoHS Compliant

annealed matte-Tin plating solderable per MIL-STD-

750, Method 2026

•

Solder temperatures: 260 ^oC for 10 s (maximum)

•

MARKING: Part number and cathode band

POLARITY: Reference diode to be operated with the

banded end positive with respect to the opposite end

•

TAPE & REEL option: Standard per EIA-296 (add

“TR” suffix to part number)

•

WEIGHT: 0.2 grams.

See package dimensions on last page

7-18-2005 REV B

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

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JANTX1N3156-1 替代型号

型号	品牌	替代类型	描述	数据表
1N3156	MICROSEMI	完全替代	8.4 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
1N3156-1	MICROSEMI	类似代替	8.4 Volt Temperature Compensated Zener Reference Diodes
JANS1N3156-1	MICROSEMI	功能相似	Zener Diode, 8.4V V(Z), 5%, 0.5W, Silicon, DO-35, HERMETIC SEALED, GLASS, SIMILAR TO DO-7,

与JANTX1N3156-1相关器件

型号	品牌	获取价格	描述	数据表
JANTX1N3156A	MICROSEMI	获取价格	Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7,
JANTX1N3156A-1	MICROSEMI	获取价格	Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7,
JANTX1N3156UR-1	CDI-DIODE	获取价格	Zener Diode, 8.4V V(Z), 5%, 0.5W, Silicon, DO-213AA, HERMETIC SEALED, GLASS PACKAGE-2
JANTX1N3156UR-1	MICROSEMI	获取价格	Zener Diode, 8.4V V(Z), 5%, 0.5W, Silicon, DO-213AA, HERMETIC SEALED, GLASS PACKAGE-2
JANTX1N3157	MICROSEMI	获取价格	Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7,
JANTX1N3157-1	MICROSEMI	获取价格	Zener Diode, 8.4V V(Z), 5%, 0.5W, Silicon, DO-35, HERMETIC SEALED, GLASS, SIMILAR TO DO-7,
JANTX1N3157A-1	MICROSEMI	获取价格	Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7,
JANTX1N3157UR-1	MICROSEMI	获取价格	暂无描述
JANTX1N3164	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 300A, 200V V(RRM), Silicon, DO-205AB, METAL, DO-9, 1
JANTX1N3164R	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 300A, 200V V(RRM), Silicon, DO-205AB, METAL, DO-9, 1

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